MAGX-000035-05000P GaN Wideband 50 W Pulsed Transistor in Plastic Package Rev. V3 DC - 3.5 GHz Features GaN on SiC D-Mode Transistor Technology Unmatched, Ideal for Pulsed Applications 50 V Typical Bias, Class AB Common-Source Configuration Thermally-Enhanced 3 x 6 mm 14-Lead DFN MTTF = 600 years (T < 200C) J Halogen-Free Green Mold Compound RoHS* Compliant and 260C Reflow Compatible MSL-1 Description The MAGX-000035-05000P is a GaN on SiC unmatched power device offering the widest RF frequency capability, most reliable high voltage operation, lowest overall power transistor size, cost and weight in a TRUE SMT plastic-packaging technology. Functional Schematic Use of an internal stress buffer technology allows 5 6 7 1 2 3 4 reliable operation at junction temperatures up to 200C. The small package size and excellent RF performance make it an ideal replacement for costly NC NC NC NC flanged or metal-backed module components. G G G 15 1,2 Ordering Information D D D NC NC NC NC Part Number Package MAGX-000035-05000P Bulk Packaging 8 14 13 12 11 10 9 3 MAGX-000035-0500TP 250 Piece Reel Pin Configuration MAGX-000035-PB2PPR Sample Board Pin No. Function Pin No. Function 1 No Connection 8 No Connection 1. Reference Application Note M513 for reel size information. 2. When ordering sample evaluation boards, choose a standard 2 No Connection 9 No Connection frequency range indicated on page 4 or specify a desired custom range. Custom requests may increase lead times. 3 V /RF 10 V /RF GG IN DD OUT 4 V /RF 11 V /RF GG IN DD OUT 5 V /RF 12 V /RF GG IN DD OUT 6 No Connection 13 No Connection 7 No Connection 14 No Connection 4 15 Paddle 3. MACOM recommends connecting unused package pins to ground. 4. The exposed pad centered on the package bottom must be * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. connected to RF and DC ground. 1 11 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: MAGX-000035-05000P GaN Wideband 50 W Pulsed Transistor in Plastic Package Rev. V3 DC - 3.5 GHz 5 Typical Performance : V = 50 V, I = 100 mA, T = 25C DD DQ A Parameter 30 MHz 1 GHz 2.5 GHz 3.5 GHz Units Gain 24 22 17 14 dB Saturated Power (P ) 65 65 50 45 W SAT Power Gain at P 22 21 15 11 dB SAT PAE P 73 65 58 53 % SAT 5. Typical RF performance measured in M/A-COM Technology Solutions RF evaluation boards. See recommended tuning solutions on page 4. Electrical Specifications: Freq. = 1.6 GHz, T = 25C, V = +50 V, Z = 50 A DD 0 Parameter Test Conditions Symbol Min. Typ. Max. Units RF FUNCTIONAL TESTS CW Output Power (P2.5 dB) V = 28 V, I = 100 mA P - 12 - W DD DQ OUT Pulsed Output Power (P2.5 dB) V = 50 V, I = 100 mA P 42 50 - W DD DQ OUT 1 ms and 10% Duty Cycle Pulsed Power Gain (P2.5 dB) V = 50 V, I = 100 mA G 16 18 - dB DD DQ P Pulsed Drain Efficiency (P2.5 dB) V = 50 V, I = 100 mA 55 66 - % DD DQ D Load Mismatch Stability (P2.5 dB) V = 50 V, I = 100 mA VSWR-S - 5:1 - - DD DQ Load Mismatch Tolerance (P2.5 dB) V = 50 V, I = 100 mA VSWR-T - 10:1 - - DD DQ Electrical Characteristics: T = 25C A Parameter Test Conditions Symbol Min. Typ. Max. Units DC CHARACTERISTICS Drain-Source Leakage Current V = -8 V, V = 175 V I - - 3.0 mA GS DS DS Gate Threshold Voltage V = 5 V, I = 6 mA V -5 -3 -2 V DS D GS (th) Forward Transconductance V = 5 V, I = 1500 mA G 1.1 - - S DS D M DYNAMIC CHARACTERISTICS Input Capacitance V = 0 V, V = -8 V, F = 1 MHz C - 13.1 - pF DS GS ISS Output Capacitance V = 50 V, V = -8 V, F = 1 MHz C - 5.2 - pF DS GS OSS Reverse Transfer Capacitance V = 50 V, V = -8 V, F = 1 MHz C - 0.5 - pF DS GS RSS 2 22 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: