CGHV60040D 40 W, 6.0 GHz, GaN HEMT Die Description Crees CGHV60040D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider PN: CGHV60040D bandwidths compared to Si and GaAs transistors. Features Applications 18 dB Typical Small Signal Gain at 4 GHz Cellular Infrastructure 17 dB Typical Small Signal Gain at 6 GHz Class A, AB, Linear amplifiers suitable for OFDM, 65% Typical Power Added Efficiency W-CDMA, LTE, EDGE, CDMA waveforms 40 W Typical P SAT 50 V Operation High Breakdown Voltage Up to 6 GHz Operation Packaging Information Bare die are shipped in Gel-Pak containers Non-adhesive tacky membrane immobilizes die during shipment Large Signal Models Available for ADS and MWO Rev 1.2 April 2020 4600 Silicon Drive Durham, NC 27703 wolfspeed.comCGHV60040D 2 Absolute Maximum Ratings (not simultaneous) Parameter Symbol Rating Units Conditions Drain source Voltage V 150 V 25C DSS DC Gate source Voltage V -10, +2 V 25C GS DC Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J 1 Maximum Drain Current I 3.2 A 25C MAX Maximum Forward Gate Current I 5.2 mA 25C GMAX 2 Thermal Resistance, Junction to Case (packaged) R 5.10 C/W 85C, 20.8W Dissipation JC Thermal Resistance, Junction to Case (die only) R 3.27 C/W 85C, 20.8W Dissipation JC Mounting Temperature T 320 C 30 seconds S Notes: 1 Current limit for long term, reliable operation 2 Eutectic die attach using 80/20 AuSn mounted to a 10 mil thick Cu15Mo85 carrier Electrical Characteristics (Frequency = 6 GHz unless otherwise stated T = 25C) C Characteristics Symbol Min. Typ. Max. Units Conditions DC Characteristics Gate Pinch-Off Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 5.2 mA P DS D 1 Drain Current I 4.2 5.2 A V = 6 V, V = 2.0 V DSS DS GS Drain-Source Breakdown Voltage V 125 V V = -8 V, I = 5.2 mA BD GS D On Resistance R 0.56 V = 0.1 V ON DS Gate Forward Voltage V 1.9 V I = 5.2 mA G-ON GS RF Characteristics Small Signal Gain G 17 dB V = 50 V, I = 65 mA SS DD DQ 2,3 Saturated Power Output P 40 W V = 50 V, I = 65 mA SAT DD DQ 4 Drain Efficiency 65 % V = 50 V, I = 65 mA,= P = 40 W DD DQ SAT Intermodulation Distortion IM3 -30 dBc V = 50 V, I = 65 mA, P = 40 W PEP DD DQ OUT No damage at all phase angles, Output Mismatch Stress VSWR 10 : 1 Y V = 50 V, I = 65 mA , P = 40 W CW DD DQ OUT Dynamic Characteristics Input Capacitance C 7.1 pF V = 50 V, V = -8 V, f = 1 MHz GS DS gs Output Capacitance C 1.6 pF V = 50 V, V = -8 V, f = 1 MHz DS DS gs Feedback Capacitance C 0.15 pF V = 50 V, V = -8 V, f = 1 MHz GD DS gs Notes: 1 Scaled from PCM data 2 P is defined as I = 0.52 mA SAT G 3 Pulsed 100 sec, 10% 4 Drain Efficiency = P / P OUT DC Rev 1.2 April 2020 4600 Silicon Drive Durham, NC 27703 wolfspeed.com