PN: CMPA0060002F Package Type: 780019 Figure 1. CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Crees CMPA0060002F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC employs a distributed (traveling-wave) amplifier design approach, enabling extremely wide bandwidths to be achieved in a small footprint screw-down package featuring a copper-tungsten heat sink. Typical Performance Over 20 MHz - 6.0 GHz (T = 25C) C Parameter 20 MHz 0.5 GHz 1.0 GHz 2.0 GHz 3.0 GHz 4.0 GHz 5.0 GHz 6.0 GHz Units Gain 19.9 18.8 17.8 16.8 16.8 17.5 18.5 16.5 dB 1 Saturated Output Power, P 4.3 4.1 4.5 4.2 3.7 3.9 4.8 3.7 W SAT 1 Power Gain P 14.7 13.1 12.6 12.2 12.6 10.9 12.2 9.5 dB SAT 1 PAE P 34 28 29 28 24 26 33 20 % SAT 1 Note : P is defined as the RF output power where the device starts to draw positive gate current in the range of 2-4 mA. SAT 2 Note : V = 28 V, I = 100 mA DD DQ Features Applications 17 dB Small Signal Gain Ultra Broadband Amplifiers 3 W Typical P Fiber Drivers SAT Operation up to 28 V Test Instrumentation High Breakdown Voltage EMC Amplifier Drivers High Temperature Operation 0.5 x 0.5 total product size Subject to change without notice. 1 www.cree.com/rf Rev 3.0 May 2015Absolute Maximum Ratings (not simultaneous) at 25C Parameter Symbol Rating Units Drain-source Voltage V 84 VDC DSS Gate-source Voltage V -10, +2 VDC GS Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J Maximum Forward Gate Current I 4 mA GMAX 1 Soldering Temperature T 245 C S Screw Torque 40 in-oz Thermal Resistance, Junction to Case R 4.3 C/W JC 2,3 Case Operating Temperature T -40, +150 C C Note: 1 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library 2 Measured for the CMPA0060002F at P = 2 W. DISS Electrical Characteristics (Frequency = 20 MHz to 6.0 GHz unless otherwise stated T = 25C) C Characteristics Symbol Min. Typ. Max. Units Conditions DC Characteristics 1 Gate Threshold Voltage V -3.8 -3.0 -2.7 V V = 20 V, I = 2 mA (GS)TH DS D Gate Quiescent Voltage V -2.7 VDC V = 28 V, I = 100 mA (GS)Q DD DQ Saturated Drain Current I 1.4 A V = 6.0 V, V = 2.0 V DC DS GS RF Characteristics Small Signal Gain S21 13.5 17 21.5 dB V = 28 V, I = 100 mA DD DQ Input Return Loss S11 -9 -5 dB V = 28 V, I = 100 mA DD DQ Output Return Loss S22 -9 -5 dB V = 28 V, I = 100 mA DD DQ V = 28 V, I = 100 mA, DD DQ Power Output P 2 3 W OUT Frequency = 4.0 GHz, P = 23 dBm IN V = 28 V, I = 100 mA, DD DQ Power Added Efficiency PAE 23 % Frequency = 4.0 GHz, P = 23 dBm IN V = 28 V, I = 100 mA, DD DQ Power Gain G 10 dB P Frequency = 4.0 GHz, P = 23 dBm IN No damage at all phase angles, Output Mismatch Stress VSWR 5 : 1 Y V = 28 V, I = 100 mA, DD DQ P = 23 dBm IN Notes: 1 The device will draw approximately 20-25 mA at pinch off due to the internal circuit structure. Cree, Inc. Copyright 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are 4600 Silicon Drive registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 product and/or vendor endorsement, sponsorship or association. Fax: +1.919.869.2733 www.cree.com/rf 2 CMPA0060002F Rev 3.0