PN: CMPA0060025F Package Type: 780019 Figure 1. CMPA0060025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Crees CMPA0060025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC enables extremely wide bandwidths to be achieved in a small footprint screw-down package. Typical Performance Over 20 MHz - 6.0 GHz (T = 25C) C Parameter 20 MHz 0.5 GHz 1.0 GHz 2.0 GHz 3.0 GHz 4.0 GHz 5.0 GHz 6.0 GHz Units Gain 21.4 20.1 19.3 16.7 16.6 16.8 15.7 15.5 dB Output Power P = 32 dBm 26.9 30.2 26.3 23.4 24.5 24.0 20.9 18.6 W IN Power Gain P = 32 dBm 12.3 12.8 12.2 11.7 11.9 11.8 11.3 10.7 dB IN Efficiency P = 32 dBm 63 55 40 31 33 31 28 26 % IN 1 Note : V = 50 V, I = 500 mA DD DQ Features Applications 17 dB Small Signal Gain Ultra Broadband Amplifiers 25 W Typical P Test Instrumentation SAT Operation up to 50 V EMC Amplifier Drivers High Breakdown Voltage High Temperature Operation 0.5 x 0.5 total product size Subject to change without notice. 1 www.cree.com/wireless Rev 4.0 May 2015Absolute Maximum Ratings (not simultaneous) at 25C Parameter Symbol Rating Units Drain-source Voltage V 84 VDC DSS Gate-source Voltage V -10, +2 VDC GS Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J Maximum Forward Gate Current I 4 mA GMAX 1 Soldering Temperature T 245 C S Screw Torque 40 in-oz Thermal Resistance, Junction to Case R 3.3 C/W JC 2,3 Case Operating Temperature T -40, +150 C C Note: 1 Refer to the Application Note on soldering at www.cree.com/RF/Docum ent-Librar y 2 Measured for the CMPA0060025F at P = 32 dBm. IN Electrical Characteristics (Frequency = 20 MHz to 6.0 GHz unless otherwise stated T = 25C) C Characteristics Symbol Min. Typ. Max. Units Conditions DC Characteristics 2 Gate Threshold Voltage V -3.8 -3.0 -2.3 V V = 20 V, I = 20 mA (GS)TH DS D Gate Quiescent Voltage V -2.7 VDC V = 50 V, I = 500 mA, P = 32 dBm (GS)Q DD DQ IN Saturated Drain Current I 12 A V = 12 V, V = 2.0 V DC DS GS 1 RF Characteristics Power Output at P 4.5 GHz P 41.0 42.8 dBm V = 50 V, I = 500 mA, P = 32 dBm OUT OUT1 DD DQ IN Power Output at P 5.0 GHz P 41.0 43.3 dBm V = 50 V, I = 500 mA, P = 32 dBm OUT OUT2 DD DQ IN Power Output at P 6.0 GHz P 41.0 42.9 dBm V = 50 V, I = 500 mA, P = 32 dBm OUT OUT3 DD DQ IN Drain Efficiency at P 4.5 GHz 1 18.0 24.1 % V = 50 V, I = 500 mA, P = 32 dBm OUT DD DQ IN Drain Efficiency at P 5.0 GHz 2 18.0 28.0 % V = 50 V, I = 500 mA, P = 32 dBm OUT DD DQ IN Drain Efficiency at P 6.0 GHz 3 18.0 27.2 % V = 50 V, I = 500 mA, P = 32 dBm OUT DD DQ IN No damage at all phase angles, Output Mismatch Stress VSWR 5 : 1 Y V = 50 V, I = 500 mA, P = 32 dBm DD DQ IN Small Signal RF Characteristics S21 S11 S22 Frequency Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Conditions 0.02 GHz - 0.25 GHz 18.0 19.3 23.7 -4.1 -2.5 -8.5 -4.5 V = 50 V, I = 500 mA DD DQ 0.25 GHz - 0.5 GHz 18.0 19.8 22.0 -6.8 -3.5 -8.9 -4.5 V = 50 V, I = 500 mA DD DQ 0.5 GHz - 1.0 GHz 15.5 18.6 22.0 -15.3 -6.5 -6.7 -4.5 V = 50 V, I = 500 mA DD DQ 1.0 GHz - 2.0 GHz 15.5 18.6 22.0 -15.3 -12.5 -6.7 -4.5 V = 50 V, I = 500 mA DD DQ 2.0 GHz - 3.0 GHz 13.0 18.6 20.0 -15.3 -12.5 -6.0 -2.5 V = 50 V, I = 500 mA DD DQ 3.0 GHz - 6.0 GHz 13.0 16.3 20.0 -14.2 -6.5 -5.3 -2.5 V = 50 V, I = 500 mA DD DQ Notes: 1 P is defined as P = 32 dBm. OUT IN 2 The device will draw approximately 55-70 mA at pinch off due to the internal circuit structure. Cree, Inc. Copyright 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are 4600 Silicon Drive registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 product and/or vendor endorsement, sponsorship or association. Fax: +1.919.869.2733 www.cree.com/rf 2 CMPA0060025F Rev 4.0