CMPA801B025 25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier Description Crees CMPA801B025 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC is available in a 10-lead metal/ceramic flanged package (CMPA801B025F) or small form-factor PNs: CMPA801B025F and CMPA801B025P Package Types: 440213 and 440216 pill package (CMPA801B025P) for optimal electrical and thermal performance. Typical Performance Over 8.5 - 11.0 GHz (T = 25C) C Parameter 8.5 GHz 10.0 GHz 11.0 GHz Units 1 Output Power 38.0 37.0 35.5 W 1 Output Power 45.8 45.7 45.5 dBm 1 Power Added Efficiency 37.0 36.0 35.0 % 1 Note : Measured in CMPA801B025F-AMP under 100 uS pulse width, 10% duty Features Applications Marine Radar 8.5 - 11.0 GHz Operation Communications 37 W P typical OUT Satellite Communication Uplink 16 dB Power Gain 36% Typical PAE 50 Ohm Internally Matched <0.1 dB Power Droop Rev 4.1 - April 2020 4600 Silicon Drive Durham, NC 27703 wolfspeed.comCMPA801B025 2 Absolute Maximum Ratings (not simultaneous) Parameter Symbol Rating Units Conditions Drain-source Voltage V 84 V 25C DSS DC Gate-source Voltage V -10, +2 V 25C GS DC Power Dissipation P 77 W DISS Storage Temperature T -55, +150 C STG Operating Junction Temperature T 225 C J Maximum Forward Gate Current I 13 mA 25C GMAX 1 Soldering Temperature T 245 C S Screw Torque 40 in-oz Pulse Width = 100 s, Duty Cycle = Thermal Resistance, Junction to Case R 1.22 C/W JC 10%, P = 55 W DISS Thermal Resistance, Junction to Case R 1.80 C/W CW, P = 55 W, 85C JC DISS Pulse Width = 100 s, Duty Cycle = Case Operating Temperature T -40, +130 C C 10%, P = 55 W DISS Case Operating Temperature T -40, +90 C CW, P = 55 W C DISS Note: 1 Refer to the Application Note on soldering at wolfspeed.com/rf/document-library Electrical Characteristics (Frequency = 8.5 GHz to 11.0 GHz unless otherwise stated T = 25C) C Characteristics Symbol Min. Typ. Max. Units Conditions 1 DC Characteristics Gate Threshold V -3.8 -3.0 -2.3 V V = 10 V, I = 13.2 mA GS(TH) DS D Gate Quiescent Voltage V -2.7 V V = 28 V, I = 1.2 A Q DS D 2 Saturated Drain Current I 10.6 13.0 A V = 6.0 V, V = 2.0 V DS DS GS Drain-Source Breakdown Voltage V 84 100 V V = -8 V, I = 13.2 mA BD GS D 3 RF Characteristics Small Signal Gain S21 20 24 dB V = 28 V, I = 1.2 A, P = -20 dBm DD DQ IN Input Return Loss S11 6.0 dB V = 28 V, I = 1.2 A DD DQ Output Return Loss S22 6.0 dB V = 28 V, I = 1.2 A DD DQ No damage at all phase angles, V = 28 V, I = 1.2 A, DD DQ Output Mismatch Stress VSWR 5:1 Y Pulse Width = 100 s, Duty Cycle = 10%, P = 30 dBm IN Notes: 1 Measured on wafer prior to packaging 2 Scaled from PCM data 3 Measured in the CMPA801B025F-AMP Rev 4.1 - April 2020 4600 Silicon Drive Durham, NC 27703 wolfspeed.com