PN: CMPA2560025F
Package Type: 780019
Figure 1.
CMPA2560025F
25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier
Crees CMPA2560025F is a gallium nitride (GaN) High Electron Mobility
Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).
GaN has superior properties compared to silicon or gallium arsenide, including
higher breakdown voltage, higher saturated electron drift velocity and higher
thermal conductivity. GaN HEMTs also offer greater power density and wider
bandwidths compared to Si and GaAs transistors. This MMIC contains a
two-stage reactively matched amplifier enabling very wide bandwidths to
be achieved in a small footprint screw-down package featuring a Copper-
Tungsten heat-sink.
Typical Performance Over 2.5-6.0 GHz (T = 25C)
C
Parameter 2.5 GHz 4.0 GHz 6.0 GHz Units
Gain 27.5 24.3 23.1 dB
1
Saturated Output Power, P 35.8 37.5 25.6 W
SAT
Power Gain @ P 43 dBm 23.1 20.9 16.3 dB
OUT
PAE @ P 43 dBm 31.5 32.8 30.7 %
OUT
1
Note : P is defined as the RF output power where the device starts to draw positive gate current in the range of 7-13 mA.
SAT
Features
Applications
24 dB Small Signal Gain
Ultra Broadband Amplifiers
25 W Typical P
Fiber Drivers
SAT
Operation up to 28 V
Test Instrumentation
High Breakdown Voltage
EMC Amplifier Drivers
High Temperature Operation
Subject to change without notice.
1
www.cree.com/rf
Rev 3.0 May 2015Absolute Maximum Ratings (not simultaneous) at 25C
Parameter Symbol Rating Units
Drain-source Voltage V 84 VDC
DSS
Gate-source Voltage V -10, +2 VDC
GS
Storage Temperature T -65, +150 C
STG
Operating Junction Temperature T 225 C
J
Forward Gate Current I 13 mA
G
Screw Torque T 40 in-oz
Thermal Resistance, Junction to Case R 2.5 C/W
JC
Electrical Characteristics (Frequency = 2.5 GHz to 6.0 GHz unless otherwise stated; T = 25C)
C
Characteristics Symbol Min. Typ. Max. Units Conditions
DC Characteristics
Gate Threshold Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 20 mA
(GS)TH DS D
Gate Quiescent Voltage V -2.7 VDC V = 28 V, I = 1200 mA
(GS)Q DD D
Drain-Source Breakdown Voltage V 84 100 V V = -8 V, I = 20 mA
BD GS D
1
Saturated Drain Current I 8.0 9.7 A V = 6.0 V, V = 2.0 V
DC DS GS
2
RF Characteristics
Small Signal Gain S21 19.5 24 dB V = 28 V, I = 1200 mA
DD D
Input Return Loss S11 -8 -5 dB V = 28 V, I = 1200 mA
DD D
Output Return Loss S22 -8 -3 dB V = 28 V, I = 1200 mA
DD D
Power Output P 22.0 30 W V = 28 V, I = 1200 mA, P = 26 dBm, Freq = 4.0 GHz
1 OUT DD D IN
Power Output P 12.5 17 W V = 28 V, I = 1200 mA, P = 26 dBm, Freq = 5.0 GHz
2 OUT DD D IN
Power Output P 15.5 20 W V = 28 V, I = 1200 mA, P = 26 dBm, Freq = 6.0 GHz
3 OUT DD D IN
Power Added Efficiency PAE 34 40 % V = 28 V, I = 1200 mA, P = 26 dBm, Freq = 4.0 GHz
1 DD D IN
Power Added Efficiency PAE 20 26 % V = 28 V, I = 1200 mA, P = 26 dBm, Freq = 5.0 GHz
2 DD D IN
Power Added Efficiency PAE 24 30 % V = 28 V, I = 1200 mA, P = 26 dBm, Freq = 6.0 GHz
3 DD D IN
Power Gain G 17.5 18.8 dB V = 28 V, I = 1200 mA, P = 26 dBm, Freq = 4.0 GHz
1 P DD D IN
Power Gain G 15.0 16.3 dB V = 28 V, I = 1200 mA, P = 26 dBm, Freq = 5.0 GHz
2 P DD D IN
Power Gain G 16.0 17.0 dB V = 28 V, I = 1200 mA, P = 26 dBm, Freq = 6.0 GHz
3 P DD D IN
No damage at all phase angles,
Output Mismatch Stress VSWR 5 : 1 Y
V = 28 V, I = 1200 mA, P = 26 dBm
DD DQ IN
Notes:
1
Scaled from PCM data.
2
All data CW tested in CMPA2560025F-AMP.
Cree, Inc.
Copyright 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are 4600 Silicon Drive
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
product and/or vendor endorsement, sponsorship or association.
Fax: +1.919.869.2733
www.cree.com/rf
2
CMPA2560025F Rev 3.0