CMPA5585030F 30 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Description Crees CMPA5585030F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC is available in a 10 lead metal/ceramic PN: CMPA5585030F flanged package for optimal electrical and thermal performance. Package Type: 440213 Typical Performance Over 5.8 - 8.4 GHz (T = 25C) C Parameter 5.8 GHz 6.4 GHz 7.2 GHz 7.9 GHz 8.4 GHz Units 1,2 S21 25.9 23.8 26.5 24.5 26.7 dB ,2,5 Power Gain 22.3 19.0 20.9 21.6 21.2 dB 1,2,4,5 PAE 24.7 20.7 20.3 22.6 22.9 % 1,2,3,5 ACLR -37 -42 -33 -34 -40 dBc Notes (unless otherwise specified): 1 At 25C 2 Measurements are performed using Cree test fixture AD-938516 3 Under OQPSK modulated signal, 1.6 Msps, PN23, Alpha Filter = 0.2 4 Power Added Efficiency = (P - P ) / PDC OUT IN 5 Measured at P = 41 dBm OUT Features Applications Point to Point Radio 25 dB Small Signal Gain Communications Radar 30 W Typical P SAT Operation up to 28 V Satellite Communication Uplink High Breakdown Voltage High Temperature Operation Size 1.00 x 0.385 inches Rev 1.1 April 2020 4600 Silicon Drive Durham, NC 27703 wolfspeed.comCMPA5585030F 2 Absolute Maximum Ratings (not simultaneous) Parameter Symbol Rating Units Conditions Drain-source Voltage V 84 V 25C DSS DC Gate-source Voltage V -10, +2 V 25C GS DC Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J Maximum Forward Gate Current I 10 mA 25C GMAX 1 Soldering Temperature T 245 C S Screw Torque 40 in-oz Thermal Resistance, Junction to Case R 2.16 C/W CW, 85C, P = 66 W JC DISS Case Operating Temperature T -40, +150 C C Note: 1 Refer to the Application Note on soldering at wolfspeed.com/rf/document-library Electrical Characteristics (Frequency = 5.5 GHz to 8.5 GHz unless otherwise stated T = 25C) C Characteristics Symbol Min. Typ. Max. Units Conditions 1 DC Characteristics Gate Threshold Voltage V -3.8 -2.8 -2.3 V V = 10 V, I = 12.7 mA TH DS DS 2 Saturated Drain Current I 9.2 12.7 A V = 6.0 V, V = 2.0 V DS DS GS Drain-Source Breakdown Voltage V 84 V V = -8 V, I = 12.7 mA BD GS DS RF Characteristics 3 Small Signal Gain S21 22.85 26 dB V = 28 V, I = 285 mA, P = -20 dBm DD DQ IN 3 Input Return Loss S11 -7 dB V = 28 V, I = 285 mA, P = -20 dBm DD DQ IN 3 Output Return Loss S22 -7 dB V = 28 V, I = 285 mA, P = -20 dBm DD DQ IN No damage at all phase angles, Y Output Mismatch Stress VSWR 5:1 V = 28 V, I = 285 mA, P = 43 dBm DD DQ OUT Notes: 1 Measured on-wafer prior to packaging 2 Scaled from PCM data 3 Measured using network analyzer (Power = -20 dBm) Rev 1.1 April 2020 4600 Silicon Drive Durham, NC 27703 wolfspeed.com