Package Type: 3x4 DFN PN: CGHV27030S CGHV27030S 30 W, DC - 6.0 GHz, GaN HEMT The CGHV27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) which offers high efficiency, high gain and wide bandwidth capabilities. The CGHV27030S GaN HEMT devices are ideal for telecommunications applications with frequencies of 700-960 MHz, 1200-1400 MHz, 1800-2200 MHz, 2500-2700 MHz, and 3300-3700 MHz at both 50 V and 28 V operations. The CGHV27030S is also ideal for tactical communications applications operating from 20-2500 MHz, including land mobile radios. Additional applications include L-Band RADAR and S-Band RADAR. The CGHV27030S can operate with either a 50 V or 28 V rail. The transistor is available in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package. Typical Performance 2.5-2.7 GHz (T = 25C) , 50 V C Parameter 2.5 GHz 2.6 GHz 2.7 GHz Units Small Signal Gain 22.5 22.0 21.4 dB Adjacent Channel Power P =5 W -34.5 -35.0 -34.0 dBc OUT Drain Efficiency P = 5 W 28.5 29.5 30.0 % OUT Input Return Loss 8.5 14 14 dB Note: Measured in the CGHV27030S-AMP1 application circuit, under 7.5 dB PAR single carrier WCDMA signal test model 1 with 64 DPCH. Features for 50 V in CGHV27030S-AMP1 2.5 - 2.7 GHz Operation 30 W Typical Output Power 20 dB Gain at 5 W P AVE -34 dBc ACLR at 5 W P AVE 30% efficiency at 5 W P AVE High degree of APD and DPD correction can be applied Listing of Available Hardware Application Circuits / Demonstration Circuits Application Circuit Operating Frequency Amplifier Class Operating Voltage CGHV27030S-AMP1 2.5 - 2.7 GHz Class A/B 50 V CGHV27030S-AMP2 2.5 - 2.7 GHz Class A/B 28 V CGHV27030S-AMP3 1.8 - 2.2 GHz Class A/B 28 V CGHV27030S-AMP4 1.8 - 2.2 GHz Class A/B 50 V CGHV27030S-AMP5 1.2 - 1.4 GHz Class A/B 50 V Subject to change without notice. 1 www.cree.com/RF Rev 4.1 May 2017Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature Parameter Symbol Rating Units Notes Drain-Source Voltage V 125 Volts 25C DSS Gate-to-Source Voltage V -10, +2 Volts 25C GS Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J Maximum Forward Gate Current I 4 mA 25C GMAX 1 Maximum Drain Current I 1.5 A 25C DMAX 2 Soldering Temperature T 245 C S 3 Case Operating Temperature T -40, +150 C C 4 Thermal Resistance, Junction to Case R 6.18 C/W 85C JC Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at www.cree.com/rf/document-library 3 T = Case temperature for the device. It refers to the temperature at the ground tab underneath the package. The PCB will add additional thermal C resistance. See also, the Power Dissipation De-rating Curve on page 23. 4 Measured for the CGHV27030S at P = 12 W DISS 5 The R for Crees demonstration amplifier, CGHV27030S-AMP1, with 33 x 0.011 via holes designed on a 20 mil thick Rogers 4350 PCB, is 3.9C. The total TH R from the heat sink to the junction is 6.18C + 3.9C = 10.08C/W. TH Electrical Characteristics (T = 25C) C Characteristics Symbol Min. Typ. Max. Units Conditions 1 DC Characteristics Gate Threshold Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 4 mA GS(th) DC DS D Gate Quiescent Voltage V -2.7 V V = 50 V, I = 0.13 mA GS(Q) DC DS D Saturated Drain Current I 3.0 3.6 A V = 6.0 V, V = 2.0 V DS DS GS Drain-Source Breakdown Voltage V 150 V V = -8 V, I = 4 mA (BR)DSS DC GS D 2,3 RF Characteristics (T = 25C, F = 2.65 GHz unless otherwise noted) C 0 Gain G 19 21.3 - dB V = 50 V, I = 0.13 A, P = 10 dBm DD DQ IN 4 Output Power P 43 44 dBm V = 50 V, I = 0.13 A, P = 28 dBm OUT DD DQ IN 4 Drain Efficiency 48 60 - % V = 50 V, I = 0.13 A, P = 28 dBm DD DQ IN No damage at all phase angles, 4 Output Mismatch Stress VSWR - 10 : 1 - Y V = 50 V, I = 0.13 A, P = 28 dBm DD DQ IN Dynamic Characteristics 5 Input Capacitance C 5.38 pF V = 50 V, V = -8 V, f = 1 MHz GS DS gs 5 Output Capacitance C 1.18 pF V = 50 V, V = -8 V, f = 1 MHz DS DS gs Feedback Capacitance C 0.12 pF V = 50 V, V = -8 V, f = 1 MHz GD DS gs Notes: 1 Measured on wafer prior to packaging 2 Scaled from PCM data 3 Measured in Crees production test fixture. This fixture is designed for high volume test at 2.65 GHz 4 Un-modulated Pulsed Signal 100 s, 10% duty cycle 5 Includes package parasitics. Cree, Inc. 4600 Silicon Drive Copyright 2013 - 2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 registered trademarks of Cree, Inc. Fax: +1.919.869.2733 www.cree.com/rf 2 CGHV27030S Rev 4.1