Package Types: 440193 & 440206 PN: CGHV40050F & CGHV40050P CGHV40050 50 W, DC - 4.0 GHz, 50 V, GaN HEMT Crees CGHV40050 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40050, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications up to 4 GHz. The reference HPA design in the datasheet operates from 800 MHz to 2 GHz operation instantaneously. It is a demonstration amplifier to showcase the CGHV40050s high efficiency, high gain and wide bandwidth capabilities. The device can be used for a range of applications from narrow band UHF, L and S Band as well as multi-octave bandwidth amplifiers up to 4 GHz. The transistor is available in a 2-lead flange and pill package. Typical Performance Over 800 MHz - 2.5 GHz (T = 25C), 50 V C Parameter 800 MHz 1.2 GHz 1.4 GHz 1.8 GHz 2.0 GHz Units Small Signal Gain 17.6 16.9 17.7 17.5 14.8 dB Saturated Output Power 65 70 63 77 60 W Drain Efficiency P 63 63 60 53 52 % SAT Input Return Loss 5 5.5 4.2 8 5 dB Note: Measured CW in the CGHV40050F-AMP application circuit. Features Up to 4 GHz Operation 77 W Typical Output Power 17.5 dB Small Signal Gain at 1.8 GHz Application Circuit for 0.8 - 2.0 GHz 53 % Efficiency at P SAT 50 V Operation Subject to change without notice. 1 www.cree.com/rf Rev 2.0 - December 2016Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature Parameter Symbol Rating Units Conditions Drain-Source Voltage V 150 Volts 25C DSS Gate-to-Source Voltage V -10, +2 Volts 25C GS Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J Maximum Forward Gate Current I 10.4 mA 25C GMAX 1 Maximum Drain Current I 6.3 A 25C DMAX 2 Soldering Temperature T 245 C S Screw Torque 40 in-oz 3 Thermal Resistance, Junction to Case R 3.04 C/W 85C JC 4 Thermal Resistance, Junction to Case R 3.11 C/W 85C JC 5 Case Operating Temperature T -40, +80 C 30 seconds C Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library 3 Measured for the CGHV40050P at P = 41.6 W. DISS 4 Measured for the CGHV40050F at P = 41.6 W. DISS 5 See also, Power Derating Curve on Page 7. Electrical Characteristics (T = 25C) C Characteristics Symbol Min. Typ. Max. Units Conditions 1 DC Characteristics Gate Threshold Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 10.4 mA GS(th) DC DS D Gate Quiescent Voltage V -2.7 V V = 50 V, I = 0.3 A GS(Q) DC DS D 2 Saturated Drain Current I 7.8 10.4 A V = 6.0 V, V = 2.0 V DS DS GS Drain-Source Breakdown Voltage V 150 V V = -8 V, I = 10.4 mA BR DC GS D 3 RF Characteristics (T = 25C, F = 1.8 GHz unless otherwise noted) C 0 Small Signal Gain G 17.5 19 dB V = 50 V, I = 0.3 A SS DD DQ Power Gain G 15.5 dB V = 50 V, I = 0.3 A, P = P P DD DQ OUT SAT 4 Power Output at Saturation P 70 77 W V = 50 V, I = 0.3 A SAT DD DQ Drain Efficiency 48 53 % V = 50 V, I = 0.3 A, P = P DD DQ OUT SAT No damage at all phase angles, Y Output Mismatch Stress VSWR 10 : 1 V = 50 V, I = 0.3 A, P = 50 W CW DD DQ OUT 5 Dynamic Characteristics Input Capacitance C 16 pF V = 50 V, V = -8 V, f = 1 MHz GS DS gs Output Capacitance C 5 pF V = 50 V, V = -8 V, f = 1 MHz DS DS gs Feedback Capacitance C 0.3 pF V = 50 V, V = -8 V, f = 1 MHz GD DS gs Notes: 1 Measured on wafer prior to packaging. 2 Scaled from PCM data. 3 Measured in CGHV40050-AMP 4 P is defined as I = 1 mA. SAT G 5 Includes package Cree, Inc. 4600 Silicon Drive Copyright 2015-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 registered trademarks of Cree, Inc. Fax: +1.919.869.CREE Fax: +1.919.869.2733 2 CGHV40050 Rev 2.0 www.cree.com/rf