X-On Electronics has gained recognition as a prominent supplier of CGHV40050F RF JFET Transistors across the USA, India, Europe, Australia, and various other global locations. CGHV40050F RF JFET Transistors are a product manufactured by Wolfspeed. We provide cost-effective solutions for RF JFET Transistors, ensuring timely deliveries around the world.

CGHV40050F Wolfspeed

CGHV40050F electronic component of Wolfspeed
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Part No.CGHV40050F
Manufacturer: Wolfspeed
Category: RF JFET Transistors
Description: RF JFET Transistors GaN HEMT DC-4.0GHz, 50 Watt
Datasheet: CGHV40050F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 266.409 ea
Line Total: USD 266.41 
Availability - 161
Ship by Fri. 27 Dec to Tue. 31 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
161
Ship by Fri. 27 Dec to Tue. 31 Dec
MOQ : 1
Multiples : 1
1 : USD 266.409
10 : USD 259.677
25 : USD 259.677
50 : USD 259.677
100 : USD 259.413
250 : USD 259.38
500 : USD 259.369
1000 : USD 259.303
2500 : USD 259.281

   
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We are delighted to provide the CGHV40050F from our RF JFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CGHV40050F and other electronic components in the RF JFET Transistors category and beyond.

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Package Types: 440193 & 440206 PN: CGHV40050F & CGHV40050P CGHV40050 50 W, DC - 4.0 GHz, 50 V, GaN HEMT Crees CGHV40050 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40050, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications up to 4 GHz. The reference HPA design in the datasheet operates from 800 MHz to 2 GHz operation instantaneously. It is a demonstration amplifier to showcase the CGHV40050s high efficiency, high gain and wide bandwidth capabilities. The device can be used for a range of applications from narrow band UHF, L and S Band as well as multi-octave bandwidth amplifiers up to 4 GHz. The transistor is available in a 2-lead flange and pill package. Typical Performance Over 800 MHz - 2.5 GHz (T = 25C), 50 V C Parameter 800 MHz 1.2 GHz 1.4 GHz 1.8 GHz 2.0 GHz Units Small Signal Gain 17.6 16.9 17.7 17.5 14.8 dB Saturated Output Power 65 70 63 77 60 W Drain Efficiency P 63 63 60 53 52 % SAT Input Return Loss 5 5.5 4.2 8 5 dB Note: Measured CW in the CGHV40050F-AMP application circuit. Features Up to 4 GHz Operation 77 W Typical Output Power 17.5 dB Small Signal Gain at 1.8 GHz Application Circuit for 0.8 - 2.0 GHz 53 % Efficiency at P SAT 50 V Operation Subject to change without notice. 1 www.cree.com/rf Rev 2.0 - December 2016Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature Parameter Symbol Rating Units Conditions Drain-Source Voltage V 150 Volts 25C DSS Gate-to-Source Voltage V -10, +2 Volts 25C GS Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J Maximum Forward Gate Current I 10.4 mA 25C GMAX 1 Maximum Drain Current I 6.3 A 25C DMAX 2 Soldering Temperature T 245 C S Screw Torque 40 in-oz 3 Thermal Resistance, Junction to Case R 3.04 C/W 85C JC 4 Thermal Resistance, Junction to Case R 3.11 C/W 85C JC 5 Case Operating Temperature T -40, +80 C 30 seconds C Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library 3 Measured for the CGHV40050P at P = 41.6 W. DISS 4 Measured for the CGHV40050F at P = 41.6 W. DISS 5 See also, Power Derating Curve on Page 7. Electrical Characteristics (T = 25C) C Characteristics Symbol Min. Typ. Max. Units Conditions 1 DC Characteristics Gate Threshold Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 10.4 mA GS(th) DC DS D Gate Quiescent Voltage V -2.7 V V = 50 V, I = 0.3 A GS(Q) DC DS D 2 Saturated Drain Current I 7.8 10.4 A V = 6.0 V, V = 2.0 V DS DS GS Drain-Source Breakdown Voltage V 150 V V = -8 V, I = 10.4 mA BR DC GS D 3 RF Characteristics (T = 25C, F = 1.8 GHz unless otherwise noted) C 0 Small Signal Gain G 17.5 19 dB V = 50 V, I = 0.3 A SS DD DQ Power Gain G 15.5 dB V = 50 V, I = 0.3 A, P = P P DD DQ OUT SAT 4 Power Output at Saturation P 70 77 W V = 50 V, I = 0.3 A SAT DD DQ Drain Efficiency 48 53 % V = 50 V, I = 0.3 A, P = P DD DQ OUT SAT No damage at all phase angles, Y Output Mismatch Stress VSWR 10 : 1 V = 50 V, I = 0.3 A, P = 50 W CW DD DQ OUT 5 Dynamic Characteristics Input Capacitance C 16 pF V = 50 V, V = -8 V, f = 1 MHz GS DS gs Output Capacitance C 5 pF V = 50 V, V = -8 V, f = 1 MHz DS DS gs Feedback Capacitance C 0.3 pF V = 50 V, V = -8 V, f = 1 MHz GD DS gs Notes: 1 Measured on wafer prior to packaging. 2 Scaled from PCM data. 3 Measured in CGHV40050-AMP 4 P is defined as I = 1 mA. SAT G 5 Includes package Cree, Inc. 4600 Silicon Drive Copyright 2015-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 registered trademarks of Cree, Inc. Fax: +1.919.869.CREE Fax: +1.919.869.2733 2 CGHV40050 Rev 2.0 www.cree.com/rf

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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