PN: CGHV59350
Package Type: 440217 and 440218
CGHV59350
350 W, 5200 - 5900 MHz, 50-Ohm Input/Output Matched, GaN HEMT for C-Band Radar Systems
Crees CGHV59350 is a gallium nitride (GaN) high electron mobility transistor (HEMT)
designed specifically with high efficiency, high gain and wide bandwidth capabilities,
which makes the CGHV59350 ideal for 5.2 - 5.9 GHz C-Band radar amplifier applications.
The transistor is supplied in a ceramic/metal flange package, type 440217 and 440218.
Typical Performance Over 5.2 - 5.9 GHz (T = 25C) of Demonstration Amplifier
C
Parameter 5.2 GHz 5.55 GHz 5.9 GHz Units
Output Power 468 475 468 W
Gain 10.7 10.8 10.7 dB
Drain Efficiency 68 62 59 %
Note:
Measured in the CGHV59350-AMP under 100 s pulse width, 10% duty cycle, P = 46 dBm
IN
Features
5.2 - 5.9 GHz Operation
470 W Typical Output Power
10.7 dB Power Gain
60% Typical Drain Efficiency
50 Ohm Internally Matched
<0.3 dB Pulsed Amplitude Droop
Subject to change without notice.
1
www.cree.com/rf
Rev 1.1 - January 2017 - PRELIMINARYAbsolute Maximum Ratings (not simultaneous)
Parameter Symbol Rating Units Conditions
Pulse Width PW 100 s
Duty Cycle DC 10 %
Drain-Source Voltage V 125 Volts 25C
DSS
Gate-to-Source Voltage V -10, +2 Volts 25C
GS
Storage Temperature T -65, +150 C
STG
Operating Junction Temperature T 225 C
J
Maximum Forward Gate Current I 64 mA 25C
GMAX
1
Maximum Drain Current I 24 A 25C
DMAX
2
Soldering Temperature T 245 C
S
Screw Torque 40 in-oz
Pulsed Thermal Resistance, Junction to Case R 0.31 C/W 100 sec, 10%, 85C , P = 320 W
JC
DISS
3
Case Operating Temperature T -40, +125 C
C
Notes:
1
Current limit for long term, reliable operation
2
Refer to the Application Note on soldering at