X-On Electronics has gained recognition as a prominent supplier of TGA2601-SM-T/R RF JFET Transistors across the USA, India, Europe, Australia, and various other global locations. TGA2601-SM-T/R RF JFET Transistors are a product manufactured by Qorvo. We provide cost-effective solutions for RF JFET Transistors, ensuring timely deliveries around the world.

TGA2601-SM-T/R Qorvo

TGA2601-SM-T/R electronic component of Qorvo
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Part No.TGA2601-SM-T/R
Manufacturer: Qorvo
Category: RF JFET Transistors
Description: Transistors RF JFET 800-3000MHz NF .7dB Gain 19dBm
Datasheet: TGA2601-SM-T/R Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 2500
Multiples : 2
2500 : USD 6.282
N/A

Obsolete
0
MOQ : 2500
Multiples : 2500
2500 : USD 1.952
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Operating Frequency
Gain
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Product
Series
Type
Brand
Continuous Drain Current
Factory Pack Quantity :
Cnhts
Hts Code
Nf - Noise Figure
Product Type
Subcategory
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TGA2601-SM-T/R from our RF JFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TGA2601-SM-T/R and other electronic components in the RF JFET Transistors category and beyond.

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TGA2601-SM 800 - 3000 MHz High IP3 Dual pHEMT Key Features and Performance 800 - 3000 MHz Frequency Range <0.7 dB Noise Figure Gain 24 dB 900 MHz, 19 dB 1950 MHz, 19 dB 2600 MHz Bias Conditions: 4 V/100 mA Package Dimensions: 4.0 x 4.0 x 0.9 mm Measured Performance Bias conditions: Vd = 4 V, Idq = 100 mA, Vg = -0.2 V Typical Primary Applications Base Station 30 WiMAX 25 Product Description 20 The TriQuint TGA2601-SM is a packaged low 15 noise dual pHEMT discrete device. The 10 TGA2601-SM operates from 800 - 3000 MHz. 900 MHz Balanced 5 1950 MHz Balanced The TGA2601-SM in the balanced application 2600 MHz Balanced 0 circuit typically provides <0.7 dB noise figure 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 with a small signal gain of >24 dB at 900 MHz, Frequency (GHz) >19 dB at 1950 MHz, >19 dB at 2600 MHz. 1.2 1.1 The TGA2601-SM is available in a low-cost, 1 surface mount 16 lead 4 x 4 QFN style 0.9 package and is ideally suited for base station 0.8 and WiMAX applications. 0.7 0.6 0.5 Balanced amplifier evaluation boards are 900 MHz Balanced 0.4 available tuned to 900, 1950, and 2600 MHz 900 MHz Balanced (De-embedded Hybrid) 0.3 1950 MHz Balanced upon request. 1950 MHz Balanced (De-embedded Hybrid) 0.2 2600 MHz Balanced 0.1 2600 MHz Balanced (De-embedded Hybrid) 0 Lead-free and RoHS compliant. 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 Frequency (GHz) Datasheet subject to change without notice. 1 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw tqs.com October 2009 RevA NF (dB) S21 (dB)TGA2601-SM Table I Absolute Maximum Ratings 1/ Symbol Parameter Value Notes + V Positive Supply Voltage 5 V 1/ 2/ - V Negative Supply Voltage -1 V to 0.5 V 1/ + I Positive Supply Current (per channel) 100 mA 1/ 2/ - I Negative Supply Current (per channel) 5 mA 1/ P Input Continuous Wave Power +13 dBm 1/ 2/ IN P Power Dissipation 500 mW 1/ 2/ D T Operating Channel Temperature 200 C 3/ CH T Mounting Temperature 260 C M (10 Seconds) T Storage Temperature -65 to 150 C STG 1/ These ratings represent the maximum operable values for this device 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed P at a package base temperature of 80 C D 3/ Junction operating temperature will directly affect the device lifetime (Tm). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. Table II Recommended Operating Conditions Symbol Parameter Value + V Positive Supply Voltage 4 V - V Negative Supply Voltage -0.2 V Typical + I Positive Supply Current (Balanced Circuit) 100 mA + I Positive Supply Current (Single Channel) 50 mA 2 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw tqs.com October 2009 RevA

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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