TGA2700 X Band Driver Amplifier General Description TGA2700 is an X-band driver amplifier that operates between 7-13 GHz. The amplifier is designed using Qorvos proven standard 0.25 um 3MI pHEMT production process. The TGA2700 can provide a typical 30dBm output power at +10 dBm input power and has a high small signal gain of 25 dB. With a small die size of 1.57 x 1.33 mm, the device has DC blockings at both input and output for easy system integration. The TGA2700 is 100% DC and RF tested on-wafer to ensure performance compliance. Product Features Measured Performance Frequency Range: 7-13 GHz Bias conditions: Vd = 9 V, Idq = 300 mA EG7109F Fixtured S-Parameters vs Temperature Wafer 0412603-02, R27C15, Vds = 9.0 V, Ids = 300 mA 25 dB Nominal Gain 30 30 30dBm Output Power Pin=10dBm 25 25 12 dB Input Return Loss Gain 20 20 10 dB Output Return Loss 15 15 0.25 um 3MI pHEMT Technology 10 10 Nominal Bias 9V 300 mA / 225 mA 5 5 Chip Dimensions: 1.57 x 1.33 x 0.10 mm 0 0 (0.062 x 0.052 x 0.004 in) -5 -5 -10 Input -10 -15 -15 -20 -20 Output -25 -25 -30 -30 Applications 7 8 9 10 11 12 13 Frequency (GHz) EG7109F Fixtured Data: Pout Wafer 0412603-01, R17C24, Vds/Ids=9V/300mA General Communication Applications Point to Point Radios 34 Electronic Warfare Applications 32 30 28 26 24 Ordering Information 22 Part Description 20 7 8 9 10 11 12 13 TGA2700 X-Band Driver Amplifier Frequency (GHz) TGA2700EVB TGA2700 Evaluation Board, Qty 1 Data Sheet Rev A, October 2019 Subject to change without notice - 1 of 16 - www.qorvo.com Gain (dB) Output Power at Pin = 10dBm (dBm) Return Loss (dB)TGA2700 X Band Driver Amplifier Absolute Maximum Ratings Parameter Min Value Max Value Units Drain Voltage (V ) - 10 V V D Gate Voltage Range (V ) -1.2 0 V G Drain Current (IDS DRIVE) - 536 mA Gate Current (I ) - 14 mA G Power Dissipation (P ) - 3.7 W DISS Input Power, (CW, 50 ) - 20 dBm Channel temperature (T ) - 200 C CH Mounting Temperature - 320 C (30 Seconds maximum) Storage Temperature -65 150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Extended application of Absolute Maximum Rating conditions may reduce device reliability. Recommended Operating Conditions Parameter Value Units Drain Voltage 9 V Drain Current (quiescent, I ) 300 mA DQ Gate Voltage (typical) 0.7 V Operating Temperature Range 40 to 85 C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Test conditions unless otherwise noted: 25 C, V = 9 V, I = 300 mA, V = - 0.7 V typical. D DQ G Data de-embedded to device, bond wire effects are included in data. Parameter Min Typical Max Units Operating Frequency Range 7.0 13.0 GHz Small Signal Gain 25 dB Input Return Loss 12 dB Output Return Loss 10 dB Output Power 30 dBm Power Added Efficiency ( Pin = 10 dBm) 27 % Output TOI (Pin/Tone = -5 dBm, 10 MHz tone spacing) 36 dBm Data Sheet Rev A, October 2019 Subject to change without notice - 2 of 16 - www.qorvo.com