TGA2710-SM 8W 9.5-11.5 GHz Power Amplifier Applications Marine and Air Radar, Traffic Control Weather Monitoring Port Security Point-to-Point Radio Communications QFN 7x7mm 22L Product Features Functional Block Diagram Frequency Range: 9.5 - 11.5 GHz Saturated Output Power: 39 dBm Small Signal Gain: 22 dB Bias: Vd = 9 V, Idq = 1.05 A, Vg = -0.74 V typi- cal General Description Pin Configuration The TriQuint TGA2710-SM provides 22 dB of small signal gain and 8W of output power across 9.5- Pin Symbol 11.5 GHz. TGA2710-SM is designed using 1,2,3,5,6,7,11,12,13,14, Gnd TriQuints proven standard 0.25 m gate pHEMT 16,17,18,19 3MI production process. 4 RF In The TGA2710-SM features a ceramic QFN de- signed for surface mount to a printed circuit board. 8 Vg 9 Vd1 Fully matched to 50 ohms and with integrated DC blocking capacitors on both I/O ports, the TGA2710 10 Vd2 -SM is ideally suited to support both commercial 15 RF Out and defense related applications 20 Vd2 Lead-free and RoHS compliant. 21 Vd1 Evaluation Boards are available upon request. 22 Vg Ordering Information Part No. ECCN Description TGA2710-SM X3A001.b.2.b -band Power Amplifier Preliminary Data Sheet: 10/27/2012 - 1 of 13 - Disclaimer: Subject to change without notice 2012 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network TGA2710-SM 8W 9.5-11.5 GHz Power Amplifier Specifications Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Drain Voltage, Vd 10 V Vd 9 V Gate Voltage, Vg -1.2 to 0.5 V Idq (no RF drive) 1.05 A Drain Current, Id 3.85 A Id drive (under RF 2.05 A drive) Gate Current range, Ig -14 to 126 mA Vg -0.74 V RF Input Power, CW, 50 ,T = 25C 23 dBm Electrical specifications are measured at specified test o conditions. Specifications are not guaranteed over all Channel Temperature, Tch 200 C recommended operating conditions o Mounting Temperature 260 C (30 Seconds) o Storage Temperature -40 to 150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Test conditions unless otherwise noted: 25C, Vd = 9 V, Idq = 1.05 A, Vg = -0.74 V typical, CW Parameter Min Typ Max Units Operational Frequency Range 9.5 11.5 GHz Small Signal Gain 22 dB o Small Signal Gain Temperature -0.055 dB/ C Coefficient Output Power Saturation 39 dBm Power-Added Efficiency Saturation 44 Output Power 1 dB compression 38 dBm o Output Power Temperature Coefficient -0.013 dB/ C Preliminary Data Sheet: 10/27/2012 - 2 of 13 - Disclaimer: Subject to change without notice 2012 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network