TGA4036 Qorvo

TGA4036 19 - 38 GHz Medium Power Amplifier Key Features Frequency Range: 19 - 38 GHz 20 dB Nominal Gain 22 dBm Nominal Psat 30 dBm Nominal TOI Bias: 5 V, 160 mA (210mA P1dB) 0.25 um 3MI pHEMT Technology Chip Dimensions 1.69 x 0.75 x 0.10 mm (0.066 x 0.030 x 0.004 in) Product Description Primary Applications The TriQuint TGA4036 is a compact Medium Point-to-Point Radio Power Amplifier MMIC for Wide-band applications. The part is designed using TriQuints Point-to-Multipoint Communications proven standard 0.25 um power pHEMT Instrumentation production process. The TGA4036 provides a nominal 20 dB Gain Measured Fixtured Data from 19-36 GHz, with Saturated Output Power of Bias Conditions: Vd = 5 V, Id = 160 mA 22 dBm. 25 20 GAIN The part is ideally suited for low cost emerging 15 markets such as Point-to-Point Radio, Point-to- 10 Multi Point Communications, and Instrumentation. 5 0 The TGA4036 is 100% DC and RF tested on- ORL -5 wafer to ensure performance compliance. -10 -15 Evaluation boards are available. IRL -20 -25 18 20 22 24 26 28 30 32 34 36 38 40 Frequency (GHz) 25 24 23 Psat 22 21 P1dB 20 19 18 17 16 15 18 20 22 24 26 28 30 32 34 36 38 40 Frequency (GHz) Datasheet subject to change without notice 1 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw tqs.com May 2009 Rev - S-parameters (dB) Power (dBm)TGA4036 TABLE I MAXIMUM RATINGS 1/ SYMBOL PARAMETER VALUE NOTES Vd Drain Voltage 7 V 2/ Vg Gate Voltage Range -1 TO +0.5 V Id Drain Current 400 mA 2/ 3/ Ig Gate Current 7 mA 3/ P Input Continuous Wave Power 20 dBm IN P Power Dissipation 2.5 W 2/ 4/ D T Operating Channel Temperature 200C 5/ 6/ CH Mounting Temperature (30 Seconds) 320 C T Storage Temperature -65 to 150 C STG 1/ These ratings represent the maximum operable values for this device. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed P . D 3/ Total current for the entire MMIC. 4/ When operated at this bias condition with a base plate temperature of 70 C, the median life is 2.3E4 hrs. 5/ Junction operating temperature will directly affect the device median time to failure (Tm). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 6/ These ratings apply to each individual FET. TABLE II DC PROBE TEST (TA = 25 C) SYMBOL PARAMETER MINIMUM MAXIMUM UNIT Idss Saturated Drain Current 15 94 mA (Q1A) Gm Transconductance 33 106 mS (Q1A) Vp Pinch-off Voltage -1.5 -0.5 V (Q1) BVGS Breakdown Voltage Gate-Source -30 -8 V (Q1A) BVGD Breakdown Voltage Gate-Drain -30 -10 V (Q1A,Q1B) Q1A and Q1B are 150um Input FETs 2 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw tqs.com May 2009 Rev -