X-On Electronics has gained recognition as a prominent supplier of TGA5108 RF Amplifier across the USA, India, Europe, Australia, and various other global locations. TGA5108 RF Amplifier are a product manufactured by Qorvo. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

TGA5108 Qorvo

TGA5108 electronic component of Qorvo
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See Product Specifications
Part No.TGA5108
Manufacturer: Qorvo
Category: RF Amplifier
Description: RF Amplifier .05-4GHz NF 1.2dB Gain 20dB P1dB 20dBm
Datasheet: TGA5108 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 100
Multiples : 100
100 : USD 4.0134
300 : USD 3.6879
500 : USD 3.3987
1000 : USD 3.1215
2500 : USD 2.8684
5000 : USD 2.6394
10000 : USD 2.4225
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
NF - Noise Figure
OIP3 - Third Order Intercept
Pd - Power Dissipation
Operating Supply Current
Packaging
Test Frequency
Amplifier Type
Brand
Number Of Channels
Input Return Loss
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TGA5108 from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TGA5108 and other electronic components in the RF Amplifier category and beyond.

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TGA5108 High Linearity LNA Gain Block Applications Repeaters Mobile Infrastructure Defense/Aerospace LTE / WCDMA / EDGE / CDMA General Purpose Wireless IF amplifier, RF driver amplifier Military Communications Product Features Functional Block Diagram Frequency Range: 0.05 4.0 GHz NF: 1.2 dB ( 1.9 GHz) Output IP3: +35 dBm ( 1.9 GHz, 4 dBm/tone Pout) P1dB : +20 dBm ( 1.9 GHz) Small Signal Gain: 20 dB ( 1.9 GHz) +5V Single Supply, 85 mA Current Chip Dimensions: 1.49 x 0.85 x 0.085 mm General Description Pad Configuration The TriQuint TGA5108 is a high linearity Low Noise Pad No. Symbol Amplifier. The amplifier is fabricated using TriQuint s 1 RF Input TQPED process. It is internally matched and only 2 (Opt.) External Cap. requires an external RF choke and blocking/bypass 3 (Opt.) External Cap. capacitors for operation from a single +5V supply. The 4 RF Output / Bias internal active bias circuit also enables stable operation over bias and temperature variations. The TGA5108 covers the 0.054.0 GHz frequency band and is targeted for wireless infrastructure or other applications requiring high linearity and/or low noise figure. Die attach should be accomplished with conductive Ordering Information epoxy only. Eutectic attach is not recommended. Lead-free and RoHS compliant Part ECCN Description High Linearity LNA TGA5108 EAR99 Evaluation Boards are available upon request. Gain Block Datasheet: Rev - 06-19-14 Disclaimer: Subject to change without notice - 1 of 11 - 2014 TriQuint www.triquint.com TGA5108 High Linearity LNA Gain Block Absolute Maximum Ratings Recommended Operating Conditions Parameter Value Parameter Value Drain Voltage (V ) 7.0 V Drain Voltage (V ) 5 V D D Power Dissipation, 85 C (PDISS) 1.2 W Drain Current (IDQ) 85 mA Input Power, CW, 50 , T=25 C (P ) 23 dBm IN Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all operating Storage Temperature -55 to 150 C conditions. Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications 0 Test conditions unless otherwise noted: 25 C, V = 5 V, tested using EVB application circuit shown on page 7 D Parameter Min Typical Max Units Operational Frequency Range 0.05 1.9 4.0 GHz Small Signal Gain 20 dB Input Return Loss 19 dB Output Return Loss 16 dB Noise Figure 1.2 dB Output Power (1 dB Gain Compression) 20.5 dBm Output IP3 (Pout=4 dBm/tone) 35 dBm Gain Temperature Coefficient -0.011 dB/C Noise Figure Temperature Coefficient 0.005 dB/C Datasheet: Rev - 06-19-14 Disclaimer: Subject to change without notice - 2 of 11 - 2014 TriQuint www.triquint.com

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

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