TGF2952 Qorvo

TGF2952 7 Watt Discrete Power GaN on SiC HEMT Applications Marine radar Satellite communications Point to point communications Military communications Broadband amplifiers High efficiency amplifiers Product Features Functional Block Diagram Frequency Range: DC - 14 GHz 38.4 dBm Nominal PSAT at 3 GHz 75.7% Maximum PAE at 3 GHz 20.4 dB Nominal Power Gain at 3 GHz Bias: V = 32 V, I = 25 mA D DQ Technology: TQGaN25 on SiC Chip Dimensions: 1.01 x 0.82 x 0.10 mm General Description Pad Configuration The TriQuint TGF2952 is a discrete 1.25 mm GaN on Pad No. Symbol SiC HEMT which operates from DC-14 GHz. The 1 V / RF IN G TGF2952 is designed using TriQuints proven TQGaN25 2 V / RF OUT D production process. This process features advanced Backside Source / Ground field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2952 typically provides 38.4 dBm of saturated output power with power gain of 20.4 dB at 3 GHz. The maximum power added efficiency is 75.7 % which makes the TGF2952 appropriate for high efficiency applications. Ordering Information Lead-free and RoHS compliant. Part ECCN Description TGF2952 EAR99 7 Watt GaN HEMT Datasheet: Rev A 10-20-14 Disclaimer: Subject to change without notice - 1 of 22 - 2014 TriQuint www.triquint.com TGF2952 7 Watt Discrete Power GaN on SiC HEMT Absolute Maximum Ratings Recommended Operating Conditions Parameter Value Parameter Value Drain to Gate Voltage (V ) 100 V DG Drain Voltage Range (V ) 32 V D Drain Voltage (VD) 40 V Drain Quiescent Current (IDQ) 25 mA Gate Voltage Range (VG) -10 to 0 V (1) Drain Current Under RF Drive ( I ) 480 mA D Drain Current (ID) 0.75 A Pinch-off Gate Voltage (VG) 2.7 V (Typ.) Gate Current (I ) -1.25 to 2.1 mA G Channel Temperature (TCH) 225C (Max.) Power Dissipation (P ) 10.5 W D (1) 100uS PW, 10% pulses at 3GHz, Power Tuned CW Input Power (P ) 33 dBm IN Channel Temperature (T ) 275C CH Mounting Temperature (30 Sec.) 320C Storage Temperature 65 to 150C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Datasheet: Rev A 10-20-14 Disclaimer: Subject to change without notice - 2 of 22 - 2014 TriQuint www.triquint.com