TGF3020-SM 4 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor Product Overview The Qorvo TGF3020-SM is a 5W (P ), 50-input matched 3dB discrete GaN on SiC HEMT which operates from 4.0 to 6.0 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in an industry-standard 3 x 3 mm 3 x 3mm QFN package surface mount QFN package. Lead-free and ROHS compliant Evaluation boards are available upon request. Key Features Frequency: 4 to 6 GHz 1 Output Power (P ) : 6.8 W 3dB Functional Block Diagram 1 Linear Gain : 13 dB 1 Typical PAE3dB : 60% 16 15 14 13 Operating Voltage: 32 V CW and Pulse capable 1 12 Note 1: 5 GHz Load Pull 2 11 Input Matching NW Applications 3 10 Telemetry 4 9 C-band radar Communications 5 6 7 8 Test instrumentation Wideband amplifiers 5.8GHz ISM Ordering info Part No. ECCN Description TGF3020-SM EAR99 QFN Packaged Part TGF3020- EAR99 5.3 5.9 GHz EVB SMEVBP01 TGF3020- EAR99 4 6 GHz EVB SMEVBP02 Datasheet Rev. B, October 24, 2017 Subject to change without notice - 1 of 24 - www.qorvo.com TGF3020-SM 4 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor 1 1 Absolute Maximum Ratings Recommended Operating Conditions Parameter Min Typ Max Units Parameter Rating Units Operating Temp. Range 40 +25 +85 C Breakdown Voltage,BVDG +100 V Drain Voltage Range, VD +12 +32 +40 V Gate Voltage Range, V -7 to +2.0 V G Drain Bias Current, IDQ 25 mA Drain Current, IDMAX 0.6 A 4 Drain Current, I 0.25 A D Gate Current Range, IG See page 16. mA 3 Gate Voltage, VG 2.8 V 2 Power Dissipation, P 7.5 W DISS Channel Temperature (T ) 225 C CH RF Input Power, CW, T = +30 dBm 2,4 Power Dissipation (PD) 9.1 W 25C 2 Power Dissipation (PD), CW 6.5 W Channel Temperature, TCH 275 C Notes: Mounting Temperature 320 C 1. Electrical performance is measured under conditions noted (30Seconds) in the electrical specifications table. Specifications are not Storage Temperature 65 to +150 C guaranteed over all recommended operating conditions. Notes: 2. Package base at 85 C 3. To be adjusted to desired I DQ 1. Operation of this device outside the parameter ranges 4. Pulsed, 100uS PW, 20% DC given above may cause permanent damage. 2. Pulsed 100uS PW, 20% DC 1, 2 Measured Load Pull Performance Power Tuned Typical Values Parameter Units Frequency, F 4 4.4 5 5.5 GHz Drain Voltage, VD 32 32 32 32 V Drain Bias Current, IDQ 25 25 25 25 mA Output Power at 3dB 38.4 38.3 38.3 38.2 dBm compression, P3dB Power Added Efficiency at 3dB 50.1 50.4 49.5 53.0 % compression, PAE3dB Gain at 3dB compression, G3dB 9.6 9.7 9.7 10.3 dB Notes: 1. Pulsed, 100 uS Pulse Width, 20% Duty Cycle 2. Load-pull characteristic Impedance, Zo = 50 . 1, 2 Measured Load Pull Performance Efficiency Tuned Parameter Typical Values Units Frequency, F 2.7 2.9 3.1 3.3 GHz Drain Voltage, V 32 32 32 32 V D Drain Bias Current, I 25 25 25 25 mA DQ Output Power at 3dB 37.6 36.8 37.1 36.8 dBm compression, P3dB Power Added Efficiency at 3dB 60.1 61.5 59.6 59 % compression, PAE3dB Gain at 3dB compression, G 10.3 10.3 10.1 10.7 dB 3dB Notes: 1. Pulsed, 100 uS Pulse Width, 20% Duty Cycle 2. Load-pull characteristic Impedance, Zo = 50 . Datasheet Rev. B, October 24, 2017 Subject to change without notice - 2 of 24 - www.qorvo.com