BF1109WR,115 NXP

DISCRETE SEMICONDUCTORS DATA SHEET BF1109 BF1109R BF1109WR N-channel dual-gate MOS-FETs Product specification 1997 Dec 08 Supersedes data of 1997 Sep 03NXP Semiconductors Product specification BF1109 BF1109R N-channel dual-gate MOS-FETs BF1109WR FEATURES PINNING Short channel transistor with high PIN DESCRIPTION handbook, 2 columns 3 4 forward transfer admittance to input 1source capacitance ratio 2drain Low noise gain controlled amplifier 3 gate 2 up to 1 GHz 2 1 4 gate 1 Internal self-biasing circuit to Top view MSB035 ensure good cross-modulation performance during AGC and good BF1109R marking code: NBp. DC stabilization. Fig.2 Simplified outline APPLICATIONS (SOT143R). VHF and UHF applications with 9 V supply voltage, such as television tuners and professional communications equipment. handbook, 2 columns4 3 3 4 ok, halfpage DESCRIPTION Enhancement type N-channel field-effect transistor with source and 12 substrate interconnected. Integrated 21 diodes between gates and source Top view MSB014 Top view MSB842 protect against excessive input voltage surges. The BF1109, BF1109 marking code: NFp. BF1109WR marking code: NB. BF1109R and BF1109WR are encapsulated in the SOT143B, Fig.1 Simplified outline Fig.3 Simplified outline SOT143R and SOT343R plastic (SOT143B). (SOT343R). packages respectively. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V drain-source voltage 11 V DS I drain current (DC) 30 mA D P total power dissipation T 80 C 200 mW tot amb y forward transfer admittance 30 mS fs C input capacitance at gate 1 2.2 2.7 pF ig1-ss C reverse transfer capacitance f = 1 MHz 25 40 fF rss F noise figure f = 800 MHz 1.5 2.5 dB X cross-modulation input level for k = 1% at 40 dB AGC 100 dB V mod T operating junction temperature 150 C j CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. 1997 Dec 08 2