BF904 BF904R N-channel dual gate MOS-FETs Rev. 06 13 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. NXP Semiconductors Product specication N-channel dual gate MOS-FETs BF904 BF904R FEATURES and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. Specially designed for use at 5 V supply voltage Short channel transistor with high transfer admittance to CAUTION input capacitance ratio This product is supplied in anti-static packing to Low noise gain controlled amplifier up to 1 GHz prevent damage caused by electrostatic discharge Superior cross-modulation performance during AGC. during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. APPLICATIONS VHF and UHF applications with 3 to 7 V supply voltage such as television tuners and professional PINNING communications equipment. PIN SYMBOL DESCRIPTION 1 s, b source DESCRIPTION 2 d drain Enhancement type field-effect transistor in a plastic 3g gate 2 2 microminiature SOT143B and SOT143R package. The 4g gate 1 1 transistor consists of an amplifier MOS-FET with source d d handbook, halfpage handbook, halfpage 34 43 g g 2 2 g g 1 1 2 1 1 2 s,b s,b Top view MAM125 - 1 Top view MAM124 BF904R marking code: %MD. BF904 marking code: %MC. Fig.1 Simplified outline (SOT143B) and symbol. Fig.2 Simplified outline (SOT143R) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V drain-source voltage -- 7V DS I drain current -- 30 mA D P total power dissipation -- 200 mW tot T operating junction temperature -- 150 C j y forward transfer admittance 22 25 30 mS fs C input capacitance at gate 1 - 2.2 2.6 pF ig1-s C reverse transfer capacitance f = 1 MHz - 25 35 fF rs F noise gure f = 800 MHz - 2 - dB Rev. 06 - 13 November 2007 2 of 14