X-On Electronics has gained recognition as a prominent supplier of BF909 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BF909 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BF909 Nexperia

BF909 electronic component of Nexperia
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Part No.BF909
Manufacturer: Nexperia
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; RF; 7V; 40mA; 200mW; SOT143; SMT
Datasheet: BF909 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.2147 ea
Line Total: USD 644.1 
Availability - 0
MOQ: 3000  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 3000
Multiples : 1
3000 : USD 0.2147

   
Manufacturer
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Case
Polarisation
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Features Of Semiconductor Devices
Electrical Mounting
Kind Of Transistor
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Drain-Source Voltage
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Gate-Source Voltage
Power Dissipation
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BF909 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BF909 and other electronic components in the MOSFETs category and beyond.

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BF909 is an integrated silicon gate bipolar transistor (IGBT) developed by Nexperia. The IGBT consists of two MOSFET (p-channel and n-channel) and two bipolar transistors (NPN, PNP) connected in series. The device is suited for a wide variety of applications requiring high speed switching, such as high-frequency amplification, motor control, and high power strobing. Its low on-state voltage drop and high switching speeds make it perfect for use in efficient and high-power converters. The BF909 is also well suited for high-efficiency SFPS and is compliant with safety and regulatory standards including IEC/EN 60730-1 and UL 60950-1.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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