BSB008NE2LXXUMA1 Infineon

MOSFET Metal Oxide Semiconductor Field Effect Transistor TM OptiMOS TM OptiMOS Power-MOSFET, 25 V BSB008NE2LX Data Sheet Rev. 2.0 Final Power Management & MultimarketTM OptiMOS Power-MOSFET, 25 V BSB008NE2LX CanPAK MX-size 1 Description Features Optimized for e-fuse and OR-ing application Ultra low Rdson in CanPAK-MX footprint Low profile (<0.7 mm) 100% avalanche tested 100% Rg Tested Double-sided cooling 1) Compatible with DirectFET package MX footprint and outline 2) Qualified according to JEDEC for target applications Table 1 Key Performance Parameters Parameter Value Unit Gate Source V 25 V DS R 0.8 m DS(on),max I 180 A D Q 74 nC oss Q (0V..10V) 258 nC g Type / Ordering Code Package Marking Related Links BSB008NE2LX MG-WDSON-2 04E2 - 1) TM CanPAK uses DirectFET technology licensed from International Rectifier Corporation. DirectFET is a registered trademark of International Rectifier Corporation. 2) J-STD20 and JESD22 Final Data Sheet 2 Rev. 2.0, 2015-01-20 Drain Drain