X-On Electronics has gained recognition as a prominent supplier of BSB008NE2LXXUMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSB008NE2LXXUMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSB008NE2LXXUMA1 Infineon

BSB008NE2LXXUMA1 electronic component of Infineon
BSB008NE2LXXUMA1 Infineon
BSB008NE2LXXUMA1 MOSFETs
BSB008NE2LXXUMA1  Semiconductors

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See Product Specifications
Part No. BSB008NE2LXXUMA1
Manufacturer: Infineon
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 25V; 180A; 89W
Datasheet: BSB008NE2LXXUMA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
19: USD 0.8868 ea
Line Total: USD 16.85 
Availability - 0
MOQ: 19  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 11 Mar to Mon. 17 Mar
MOQ : 5000
Multiples : 5000
5000 : USD 1.5476
10000 : USD 1.4709
15000 : USD 1.4563
20000 : USD 1.4416
25000 : USD 1.4272
30000 : USD 1.4129
40000 : USD 1.3989
50000 : USD 1.3848
100000 : USD 1.371

0
Ship by Fri. 07 Mar to Tue. 11 Mar
MOQ : 1
Multiples : 5000
1 : USD 6.1488
2 : USD 3.3306
20 : USD 1.4425

0
Ship by Tue. 11 Mar to Mon. 17 Mar
MOQ : 19
Multiples : 1
19 : USD 0.8868
25 : USD 0.8513

   
Manufacturer
Product Category
Technology
Polarisation
Case
Mounting
Type Of Transistor
On-State Resistance
Drain Current
Drain-Source Voltage
Gate-Source Voltage
Power Dissipation
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We are delighted to provide the BSB008NE2LXXUMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSB008NE2LXXUMA1 and other electronic components in the MOSFETs category and beyond.

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MOSFET Metal Oxide Semiconductor Field Effect Transistor TM OptiMOS TM OptiMOS Power-MOSFET, 25 V BSB008NE2LX Data Sheet Rev. 2.0 Final Power Management & MultimarketTM OptiMOS Power-MOSFET, 25 V BSB008NE2LX CanPAK MX-size 1 Description Features Optimized for e-fuse and OR-ing application Ultra low Rdson in CanPAK-MX footprint Low profile (<0.7 mm) 100% avalanche tested 100% Rg Tested Double-sided cooling 1) Compatible with DirectFET package MX footprint and outline 2) Qualified according to JEDEC for target applications Table 1 Key Performance Parameters Parameter Value Unit Gate Source V 25 V DS R 0.8 m DS(on),max I 180 A D Q 74 nC oss Q (0V..10V) 258 nC g Type / Ordering Code Package Marking Related Links BSB008NE2LX MG-WDSON-2 04E2 - 1) TM CanPAK uses DirectFET technology licensed from International Rectifier Corporation. DirectFET is a registered trademark of International Rectifier Corporation. 2) J-STD20 and JESD22 Final Data Sheet 2 Rev. 2.0, 2015-01-20 Drain Drain

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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