X-On Electronics has gained recognition as a prominent supplier of BSB104N08NP3GXUSA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSB104N08NP3GXUSA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSB104N08NP3GXUSA1 Infineon

BSB104N08NP3GXUSA1 electronic component of Infineon
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See Product Specifications
Part No.BSB104N08NP3GXUSA1
Manufacturer: Infineon
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 80V; 32A; 48W
Datasheet: BSB104N08NP3GXUSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 5000
Multiples : 5000
5000 : USD 1.378
10000 : USD 1.3642
15000 : USD 1.3507
20000 : USD 1.3371
25000 : USD 1.3237
30000 : USD 1.3106
45000 : USD 1.2974
50000 : USD 1.2844
100000 : USD 1.2716
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.5508
10 : USD 1.283
100 : USD 1.0309
500 : USD 0.8981
1000 : USD 0.752
2500 : USD 0.7185
5000 : USD 0.6895
N/A

Obsolete
0
MOQ : 1
Multiples : 5000
1 : USD 3.6627
3 : USD 1.989
36 : USD 0.8614
N/A

Obsolete
   
Manufacturer
Product Category
Technology
Polarisation
Case
Mounting
Type Of Transistor
Drain-Source Voltage
On-State Resistance
Drain Current
Gate-Source Voltage
Power Dissipation
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We are delighted to provide the BSB104N08NP3GXUSA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSB104N08NP3GXUSA1 and other electronic components in the MOSFETs category and beyond.

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BSB104N08NP3 G OptiMOS3 Power-MOSFET Product Summary Features V 80 V DS Optimized technology for DC/DC converters 10.4 R mW DS(on),max Excellent gate charge x R product (FOM) DS(on) I 50 A D Low profile (<0.7mm) TM CanPAK M Dual sided cooling MG-WDSON-2 Low parasitic inductance N-channel, normal level Type Package Outline Marking BSB104N08NP3 G MG-WDSON-2 MP 0308 Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Continuous drain current I V =10 V, T =25C 50 A D GS C V =10 V, T =100C 32 GS C V =10 V, T =25C, GS A 13 1) R =45K/W thJA 2) I T =25C 200 Pulsed drain current D,pulse C 3) E I =30A, R =25W 110 mJ Avalanche energy, single pulse AS D GS V Gate source voltage 20 V GS 1) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information Rev. 2.1 page 1 2013-11-28BSB104N08NP3 G Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Power dissipation P T =25C 42 W tot C T =25 C, A 2.8 1) R =45K/W thJA T , T Operating and storage temperature -40 ... 150 C j stg Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R bottom - 1.0 - K/W thJC top - - 3.0 2 1) R Device on PCB - - 45 thJA 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I =1mA 80 - - V (BR)DSS GS D V V =V , I =40A Gate threshold voltage 2.0 2.7 3.5 GS(th) DS GS D V =80V, V =0V, DS GS I Zero gate voltage drain current - 0.1 10 A DSS T =25C j V =80V, V =0V, DS GS - 10 100 T =125C j I V =20V, V =0V Gate-source leakage current - 10 100 nA GSS GS DS R V =10V, I =10A Drain-source on-state resistance - 9.3 10.4 mW DS(on) GS D Gate resistance R - 2.0 - W G V >2 I R , DS D DS(on)max g Transconductance 23 46 - S fs I =30A D Rev. 2.1 page 2 2013-11-28

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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