BF909R,215 NXP

BF909 BF909R N-channel dual gate MOS-FETs Rev. 02 19 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. NXP Semiconductors Product specication N-channel dual gate MOS-FETs BF909 BF909R FEATURES transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to Specially designed for use at 5 V supply voltage ensure good cross-modulation performance during AGC. High forward transfer admittance Short channel transistor with high forward transfer CAUTION admittance to input capacitance ratio The device is supplied in an antistatic package. The Low noise gain controlled amplifier up to 1 GHz gate-source input must be protected against static Superior cross-modulation performance during AGC. discharge during transport or handling. APPLICATIONS PINNING VHF and UHF applications with 3 to 7 V supply voltage PIN SYMBOL DESCRIPTION such as television tuners and professional 1 s, b source communications equipment. 2 d drain 3g gate 2 2 DESCRIPTION 4g gate 1 1 Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The d d handbook, halfpage handbook, halfpage 34 43 g g 2 2 g g 1 1 2 1 1 2 s,b s,b Top view MAM125 - 1 Top view MAM124 BF909 marking code: %M3. BF909R marking code: %M4. Fig.1 Simplified outline (SOT143) and symbol. Fig.2 Simplified outline (SOT143R) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V drain-source voltage -- 7V DS I drain current -- 40 mA D P total power dissipation -- 200 mW tot T operating junction temperature -- 150 C j y forward transfer admittance 36 43 50 mS fs C input capacitance at gate 1 - 3.6 4.3 pF ig1-s C reverse transfer capacitance f = 1 MHz - 35 50 fF rs F noise gure f = 800 MHz - 2 2.8 dB Rev. 02 - 19 November 2007 2 of 12