BF998,215 NXP

DISCRETE SEMICONDUCTORS DATA SHEET BF998 BF998R Silicon N-channel dual-gate MOS-FETs Product specification 1996 Aug 01 Supersedes data of April 1991NXP Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs BF998 BF998R FEATURES Short channel transistor with high forward transfer handbook, halfpage d 43 admittance to input capacitance ratio Low noise gain controlled amplifier up to 1 GHz. g 2 g 1 APPLICATIONS VHF and UHF applications with 12 V supply voltage, such as television tuners and professional 1 2 communications equipment. s,b Top view MAM039 DESCRIPTION Marking code: MOp. Depletion type field effect transistor in a plastic Fig.1 Simplified outline (SOT143B) microminiature SOT143B or SOT143R package with and symbol BF998. source and substrate interconnected. The transistors are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. d handbook, halfpage CAUTION 34 The device is supplied in an antistatic package. The g 2 gate-source input must be protected against static g 1 discharge during transport or handling. PINNING 2 1 s,b PIN SYMBOL DESCRIPTION MAM040 Top view 1s, b source Marking code: MOp. 2 d drain 3g gate 2 2 Fig.2 Simplified outline (SOT143R) and symbol BF998R. 4g gate 1 1 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V drain-source voltage 12 V DS I drain current 30 mA D P total power dissipation 200 mW tot y forward transfer admittance 24 mS fs C input capacitance at gate 1 2.1 pF ig1-s C reverse transfer capacitance f = 1 MHz 25 fF rs F noise figure f = 800 MHz 1 dB T operating junction temperature 150 C j 1996 Aug 01 2