BLA0912-250,112 NXP

BLA0912-250 Avionics LDMOS transistor Rev. 4 1 September Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange. Table 1. Test information Typical RF performance measured in common source class-AB test circuit at P = 250 W and 960 MHz to 1215 MHz L frequency band. T = 25 C Z = 0.15 K/W unless otherwise specified. h th(j-h) Mode of operation f t V P G G P t t Z p DS L p p D droop(pulse) r f th(j-h) ins(rel) (MHz) ( s) % (V) (W) (dB) (dB) (%) (dB) (ns) (ns) (K/W) (deg) all modes 960 to 1215 100 10 36 250 13.5 0.8 50 0.1 25 6 0.18 5 TCAS 1030 to 1090 32 0.1 36 250 14.0 0.8 50 0 25 6 0.07 5 Mode-S 1030 to 1090 128 2 36 250 13.5 0.8 50 0.1 25 6 0.15 5 1030 to 1090 340 1 36 250 13.5 0.8 50 0.2 25 6 0.20 5 JTIDS 960 to 1215 3300 22 36 200 13.0 1.2 45 0.2 25 6 0.45 5 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits High power gain Easy power control Excellent ruggedness Source on mounting base eliminates DC isolators, reducing common mode inductance. 1.3 Applications Avionics transmitter applications in the 960 MHz to 1215 MHz frequency range such as Mode-S, TCAS and JTIDS, DME or TACAN.BLA0912-250 Avionics LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1drain 1 1 2gate 3 1 2 3source 2 3 sym039 1 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLA0912-250 - flanged LDMOST ceramic package SOT502A 2 mounting holes 2 leads 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 75 V DS V gate-source voltage - 22 V GS P total power dissipation T 25 C t =50 s =2% - 700 W tot h p T storage temperature 65 +150 C stg T junction temperature - 200 C j 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit 1 Z transient thermal impedance from junction to T = 25 C 0.18 K/W th(j-h) h heatsink 1 Thermal resistance is determined under RF operating conditions t = 100 s, = 10 %. p BLA0912-250 4 All information provided in this document is subject to legal disclaimers. Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 4 1 September 2 of 13