X-On Electronics has gained recognition as a prominent supplier of BLF147,112 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. BLF147,112 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

BLF147,112 NXP

BLF147,112 electronic component of NXP
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Part No.BLF147,112
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: RF MOSFET Transistors RF DMOS 150W VHF
Datasheet: BLF147,112 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 109.0291 ea
Line Total: USD 109.03 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 109.0291
2 : USD 105.8423
3 : USD 104.1643
5 : USD 102.7882

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Operating Frequency
Gain
Output Power
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Transistor Type
Brand
Product Type
Factory Pack Quantity :
Vgs - Gate-Source Breakdown Voltage
Vgs Th - Gate-Source Threshold Voltage
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We are delighted to provide the BLF147,112 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BLF147,112 and other electronic components in the RF MOSFET Transistors category and beyond.

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BLF147 VHF power MOS transistor Rev. 06 5 December 2006 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. NXP Semiconductors Product specication VHF power MOS transistor BLF147 FEATURES PINNING - SOT121B High power gain PIN DESCRIPTION Low intermodulation distortion 1 drain Easy power control 2 source Good thermal stability 3 gate Withstands full load mismatch. 4 source APPLICATIONS Industrial and military applications in the HF/VHF frequency range. handbook, halfpage 14 DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121B flange package with a ceramic cap. All leads are isolated from the d flange. A marking code, showing gate-source voltage g s (V ) information is provided for matched pair GS applications. Refer to the General section of the handbook for further information. 2 3 MAM267 CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and Fig.1 Simplified outline and symbol. SNW-FQ-302B. QUICK REFERENCE DATA RF performance at T = 25 C in a common source test circuit. h MODE OF f V P G d d DS L p D 3 5 OPERATION (MHz) (V) (W) (dB) (%) (dB) (dB) SSB, class-AB 28 28 150 (PEP) >17 >35 <- 30 <- 30 CW, class-B 108 28 150 typ. 14 typ. 70 -- WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. Rev. 06 - 5 December 2006 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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