BLF178XR,112 NXP

BLF178XR BLF178XRS Power LDMOS transistor Rev. 5 1 September 2015 Product data sheet 1. Product profile 1.1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band. Table 1. Application information Test signal f V P G DS L p D (MHz) (V) (W) (dB) (%) CW 108 50 1200 23 80 pulsed RF 108 50 1400 28 72 1.2 Features and benefits Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an I of 40 mA, a t of 100 s with of 20 %: Dq p Output power = 1400 W Power gain = 28 dB Efficiency = 72 % Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (HF to 128 MHz) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications Industrial, scientific and medical applications Broadcast transmitter applications BLF178XR BLF178XRS Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF178XR (SOT539A) 1drain1 12 1 2drain2 5 3gate1 3 4gate2 3 4 5 4 1 5source 2 sym117 BLF178XRS (SOT539B) 1drain1 12 1 2drain2 5 3gate1 3 3 4 4gate2 5 4 1 5source 2 sym117 1 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF178XR - flanged balanced LDMOST ceramic package SOT539A 2 mounting holes 4 leads BLF178XRS - earless flanged balanced LDMOST ceramic package SOT539B 4 leads 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 110 V DS V gate-source voltage 6+11 V GS T storage temperature 65 +150 C stg T junction temperature - 200 C j BLF178XR BLF178XRS 5 All information provided in this document is subject to legal disclaimers. Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 5 1 September 2015 2 of 14