X-On Electronics has gained recognition as a prominent supplier of BLF574,112 rf mosfet transistors across the USA, India, Europe, Australia, and various other global locations. BLF574,112 rf mosfet transistors are a product manufactured by NXP. We provide cost-effective solutions for rf mosfet transistors, ensuring timely deliveries around the world.

BLF574,112

BLF574,112 electronic component of NXP
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See Product Specifications
Part No.BLF574,112
Manufacturer: NXP
Category:RF MOSFET Transistors
Description: RF MOSFET Transistors Trans MOSFET N-CH 110V 42A 5-Pin
Datasheet: BLF574,112 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 211.6338 ea
Line Total: USD 211.63

Availability - 0
MOQ: 1  Multiples: 20
Pack Size: 20
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 31 May to Thu. 06 Jun

MOQ : 1
Multiples : 20
1 : USD 211.6338

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Operating Frequency
Gain
Output Power
Pd - Power Dissipation
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Brand
Forward Transconductance - Min
Factory Pack Quantity :
Vgs - Gate-Source Breakdown Voltage
Vgs Th - Gate-Source Threshold Voltage
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BLF574 HF / VHF power LDMOS transistor Rev. 4 1 December 2016 Product data sheet 1. Product profile 1.1 General description A 500 W to 600 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band. Table 1. Application information Mode of operation f V P G DS L p D (MHz) (V) (W) (dB) (%) CW 225 50 500 26.5 70 108 50 600 27.5 73 1.2 Features and benefits Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an I Dq of 1000 mA: Average output power = 500 W Power gain = 26.5 dB Efficiency = 70 % Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (10 MHz to 500 MHz) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications Industrial, scientific and medical applications Broadcast transmitter applicationsBLF574 HF / VHF power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1drain1 12 1 2drain2 5 3gate1 3 4gate2 3 4 5 4 1 5source 2 sym117 1 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF574 - flanged balanced LDMOST ceramic package SOT539A 2 mounting holes 4 leads 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 110 V DS V gate-source voltage 0.5 +11 V GS I drain current - 56 A D T storage temperature 65 +150 C stg T junction temperature - 225 C j 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit R thermal resistance from T =80 C P =400 W 0.23 K/W th(j-c) case L junction to case 1 R is measured under RF conditions. th(j-c) BLF574 All information provided in this document is subject to legal disclaimers. Ampleon Netherlands B.V. 2016. All rights reserved. Product data sheet Rev. 4 1 December 2016 2 of 19

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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