X-On Electronics has gained recognition as a prominent supplier of BLF574,112 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. BLF574,112 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

BLF574,112 NXP

BLF574,112 electronic component of NXP
BLF574,112 NXP
BLF574,112 RF MOSFET Transistors
BLF574,112  Semiconductors

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See Product Specifications
Part No. BLF574,112
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: RF MOSFET Transistors Trans MOSFET N-CH 110V 42A 5-Pin
Datasheet: BLF574,112 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 198.6102 ea
Line Total: USD 198.61 
Availability - 0
MOQ: 1  Multiples: 20
Pack Size: 20
Availability Price Quantity
0
Ship by Thu. 02 Jan to Wed. 08 Jan
MOQ : 1
Multiples : 20
1 : USD 198.6102

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Operating Frequency
Gain
Output Power
Pd - Power Dissipation
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Brand
Forward Transconductance - Min
Factory Pack Quantity :
Vgs - Gate-Source Breakdown Voltage
Vgs Th - Gate-Source Threshold Voltage
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We are delighted to provide the BLF574,112 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BLF574,112 and other electronic components in the RF MOSFET Transistors category and beyond.

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BLF574 HF / VHF power LDMOS transistor Rev. 4 1 December 2016 Product data sheet 1. Product profile 1.1 General description A 500 W to 600 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band. Table 1. Application information Mode of operation f V P G DS L p D (MHz) (V) (W) (dB) (%) CW 225 50 500 26.5 70 108 50 600 27.5 73 1.2 Features and benefits Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an I Dq of 1000 mA: Average output power = 500 W Power gain = 26.5 dB Efficiency = 70 % Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (10 MHz to 500 MHz) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications Industrial, scientific and medical applications Broadcast transmitter applicationsBLF574 HF / VHF power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1drain1 12 1 2drain2 5 3gate1 3 4gate2 3 4 5 4 1 5source 2 sym117 1 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF574 - flanged balanced LDMOST ceramic package SOT539A 2 mounting holes 4 leads 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 110 V DS V gate-source voltage 0.5 +11 V GS I drain current - 56 A D T storage temperature 65 +150 C stg T junction temperature - 225 C j 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit R thermal resistance from T =80 C P =400 W 0.23 K/W th(j-c) case L junction to case 1 R is measured under RF conditions. th(j-c) BLF574 All information provided in this document is subject to legal disclaimers. Ampleon Netherlands B.V. 2016. All rights reserved. Product data sheet Rev. 4 1 December 2016 2 of 19

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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