X-On Electronics has gained recognition as a prominent supplier of BLF6G10LS-260PRN:112 across the USA, India, Europe, Australia, and various other global locations. BLF6G10LS-260PRN:112 are a product manufactured by NXP. We provide cost-effective solutions for BLF6G10LS-260PRN:112, ensuring timely deliveries around the world.

BLF6G10LS-260PRN:112 NXP

BLF6G10LS-260PRN:112 electronic component of NXP
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Part No. BLF6G10LS-260PRN:112
Manufacturer: NXP
Category: Unclassified
Description: BLF6G10LS-260PRN:112
Low noise Push-Pull binary FET output amplifier, ideal for analog-to-digital converters.
Datasheet:
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
20: USD 103.9283 ea
Line Total: USD 2078.57 
Availability - 0
MOQ: 20  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 21 Feb to Thu. 27 Feb
MOQ : 20
Multiples : 1
20 : USD 103.9283

   
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We are delighted to provide the BLF6G10LS-260PRN:112 from our NXP manufacturer, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BLF6G10LS-260PRN:112 and other electronic components in the NXP manufacturer and beyond.

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BLF6G10LS-260PRN:112 is a NXP power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). It is part of the NXP BLE Series capable of medium voltage and power levels, designed for uses in motor drives, power supplies, RF power amplifiers, and switching applications. This particular model is rated for maximum drain-source voltage of 250V with continuous drain current of 10A@Tc=25°C and total power dissipation of 120W. This MOSFET also features a low on-resistance of 8.3O and high speed of <20ns. It is a P-Channel enhancement mode device, with halogen-free package, rated and tested for Hi-REL environments.

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Freescale Semiconductor - NXP
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