DocumentNumber:MRFE6VS25N NXPSemiconductors Rev. 2, 03/2019 TechnicalData RFPowerLDMOSTransistors MRFE6VS25NR1 HighRuggedness N--Channel MRFE6VS25GNR1 Enhancement--ModeLateral MOSFETs RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to 2000 MHz. These devices are fabricated usingNXPs enhancedruggedness 1.8--2000MHz,25W,50V platformandaresuitableforuseinapplicationswherehighVSWRsare WIDEBAND encountered. RFPOWERLDMOSTRANSISTORS TypicalPerformance: V =50Volts DD (1) Frequency P G IMD out ps D SignalType (W) (MHz) (dB) (%) (dBc) (2,6) 1.8to30 Two--Tone 25PEP 25 51 --30 (10kHz spacing) (3,6) 30--512 Two--Tone 25PEP 17.1 30.1 --32 (200kHz spacing) TO--270--2 PLASTIC (4) 512 Pulse(100 sec, 25Peak 25.4 74.5 MRFE6VS25NR1 20%Duty Cycle) (4) 512 CW 25 25.5 74.7 (5) 1030 CW 25 22.5 60 LoadMismatch/Ruggedness TO--270G--2 Frequency P Test in PLASTIC SignalType VSWR (MHz) (W) Voltage Result MRFE6VS25GNR1 (2) >65:1 50 NoDevice 30 CW 0.23 at allPhase Degradation (3 dB Angles Overdrive) (3) 512 CW 1.6 (3 dB Overdrive) Gate Drain 21 (4) 512 Pulse 0.14Peak (100 sec,20% (3 dB Duty Cycle) Overdrive) (4) 512 CW 0.14 (3 dB (Top View) Overdrive (5) 1030 CW 0.34 Note: The backside of the package is the (3 dB sourceterminalforthetransistor. Overdrive Figure1.PinConnections 1. Distortionproducts arereferencedtooneof twotones. Seep. 13, 20. 2. Measured in 1.8--30 MHz broadband reference circuit. 3. Measuredin30--512MHz broadbandreference circuit. 4. Measuredin512MHz narrowbandtest circuit. 5. Measuredin1030MHz narrowbandtest circuit. 6. Thevaluesshownaretheminimummeasuredperformancenumbersacrossthein- dicatedfrequency range. Features Wideoperatingfrequency range Extremeruggedness Unmatched, capableof very broadbandoperation Integratedstability enhancements Low thermal resistance ExtendedESD protectioncircuit 2012, 2019NXPB.V. MRFE6VS25NR1MRFE6VS25GNR1 RF DeviceData NXP Semiconductors 1Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V --0.5,+133 Vdc DSS Gate--SourceVoltage V --6.0,+10 Vdc GS StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperature T --40to+150 C C (1,2) OperatingJunctionTemperature T --40to+225 C J Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R 1.2 C/W JC CW: CaseTemperature80 C,25W CW,50Vdc,I =10mA,512MHz DQ ThermalImpedance,JunctiontoCase Z 0.29 C/W JC Pulse:CaseTemperature77C,25W Peak,100 sec PulseWidth, 20%Duty Cycle,50Vdc,I =10mA,512MHz DQ Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2,passes 2500V MachineModel(perEIA/JESD22--A115) B,passes 250V ChargeDeviceModel(perJESD22--C101) IV,passes 2000V Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25 Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Gate--SourceLeakageCurrent I 400 nAdc GSS (V =5Vdc,V =0Vdc) GS DS Drain--SourceBreakdownVoltage V 133 142 Vdc (BR)DSS (V =0Vdc,I =50mA) GS D Zero Gate Voltage Drain Leakage Current I 2 Adc DSS (V =50Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 7 Adc DSS (V =100Vdc,V =0Vdc) DS GS OnCharacteristics GateThresholdVoltage V 1.5 2.0 2.5 Vdc GS(th) (V =10Vdc,I =85 Adc) DS D GateQuiescentVoltage V 2.0 2.4 3.0 Vdc GS(Q) (V =50Vdc,I =10mAdc,MeasuredinFunctionalTest) DD D Drain--SourceOn--Voltage V 0.28 Vdc DS(on) (V =10Vdc,I =210mAdc) GS D DynamicCharacteristics ReverseTransferCapacitance C 0.26 pF rss (V =50Vdc 30mV(rms)ac 1MHz,V =0Vdc) DS GS OutputCapacitance C 14.2 pF oss (V =50Vdc 30mV(rms)ac 1MHz,V =0Vdc) DS GS InputCapacitance C 39.2 pF iss (V =50Vdc,V =0Vdc 30mV(rms)ac 1MHz) DS GS 1. Continuous useat maximum temperaturewillaffect MTTF. 2. MTTFcalculatoravailable at