X-On Electronics has gained recognition as a prominent supplier of BLF988S,112 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. BLF988S,112 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

BLF988S,112 NXP

BLF988S,112 electronic component of NXP
BLF988S,112 NXP
BLF988S,112 RF MOSFET Transistors
BLF988S,112  Semiconductors

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Part No. BLF988S,112
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: RF MOSFET Transistors BLF988SLDMOSTTUBE-BULK
Datasheet: BLF988S,112 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 735.3241 ea
Line Total: USD 735.32 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 06 May to Mon. 12 May
MOQ : 1
Multiples : 1
1 : USD 735.3241

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Mounting Style
Package / Case
Packaging
Brand
Factory Pack Quantity :
Vgs - Gate-Source Breakdown Voltage
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We are delighted to provide the BLF988S,112 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BLF988S,112 and other electronic components in the RF MOSFET Transistors category and beyond.

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BLF988 BLF988S Power LDMOS transistor Rev. 3 1 September 2015 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information Test signal f P P G IMD3 L(AV) L(M) p D (MHz) (W) (W) (dB) (%) (dBc) RF performance in a common source 860 MHz narrowband test circuit 2-tone, class-AB f = 860 f = 860.1 250 - 20.8 46 32 1 2 pulsed, class-AB 860 - 600 19.8 58 - 1.2 Features and benefits Excellent ruggedness (VSWR 40 : 1 through all phases) Optimum thermal behavior and reliability, R = 0.15 K/W th(j-c) High power gain High efficiency Designed for broadband operation (400 MHz to 1000 MHz) Internal input matching for high gain and optimum broadband operation Excellent reliability Easy power control Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications Communication transmitter applications Industrial applicationsBLF988 BLF988S Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF988 (SOT539A) 1drain1 12 1 2drain2 5 3gate1 3 4gate2 3 4 5 4 1 5source 2 sym117 BLF988S (SOT539B) 1drain1 12 1 2drain2 5 3gate1 3 3 4 4gate2 5 4 1 5source 2 sym117 1 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF988 - flanged balanced ceramic package 2 mounting holes 4 leads SOT539A BLF988S - earless flanged balanced ceramic package 4 leads SOT539B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 110 V DS V gate-source voltage 0.5 +11 V GS T storage temperature 65 +150 C stg 1 T junction temperature - 225 C j 1 Continuous use at maximum temperature will affect the reliability. For details refer to the on-line MTF calculator. BLF988 BLF988S 3 All information provided in this document is subject to legal disclaimers. Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 3 1 September 2015 2 of 18

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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