X-On Electronics has gained recognition as a prominent supplier of BLL6H0514-25,112 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. BLL6H0514-25,112 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

BLL6H0514-25,112 NXP

BLL6H0514-25,112 electronic component of NXP
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Part No.BLL6H0514-25,112
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: NXP Semiconductors RF MOSFET Transistors TRANSISTOR LDMOS DVR
Datasheet: BLL6H0514-25,112 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 148.72 ea
Line Total: USD 148.72

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 17 Jul to Tue. 23 Jul
MOQ : 1
Multiples : 1
1 : USD 167.641

0
Ship by Tue. 23 Jul to Thu. 25 Jul
MOQ : 1
Multiples : 1
1 : USD 148.72
2 : USD 148.72
5 : USD 148.72
10 : USD 148.72
25 : USD 148.72
50 : USD 148.72
100 : USD 147.2786
250 : USD 137.28

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Operating Frequency
Gain
Output Power
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Brand
Factory Pack Quantity :
Vgs - Gate-Source Breakdown Voltage
Vgs Th - Gate-Source Threshold Voltage
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We are delighted to provide the BLL6H0514-25,112 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BLL6H0514-25,112 and other electronic components in the RF MOSFET Transistors category and beyond.

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BLL6H0514-25 LDMOS driver transistor Rev. 5 1 September 2015 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range. Table 1. Application information Typical RF performance at T =25 C I = 50 mA in a class-AB application circuit. case Dq Mode of operation f t V P G RL P t t p DS L p in D droop(pulse) r f (MHz) ( s) (%) (V) (W) (dB) (dB) (%) (dB) (ns) (ns) pulsed RF 960 to 1215 128 10 50 25 21 10 58 0.05 8 6 1200 to 1400 300 10 50 25 19 10 50 0.05 8 6 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits Easy power control Integrated ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (0.5 GHz to 1.4 GHz) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications Amplifiers for pulsed applications in the 0.5 GHz to 1.4 GHz frequency rangeBLL6H0514-25 LDMOS driver transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1drain 1 1 2gate 1 3source 3 2 3 2 sym112 1 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLL6H0514-25 - flanged LDMOST ceramic package 2 mounting holes SOT467C 2 leads 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 100 V DS V gate-source voltage 0.5 +13 V GS I drain current - 2.5 A D T storage temperature 65 +150 C stg T junction temperature - 200 C j 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit Z transient thermal impedance from T =85 C P =25W th(j-c) case L junction to case t = 100 s = 10 % 0.86 K/W p t = 200 s =10% 1.11 K/W p t = 300 s = 10 % 1.29 K/W p t = 100 s = 20 % 1.15 K/W p BLL6H0514-25 5 All information provided in this document is subject to legal disclaimers. Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 5 1 September 2015 2 of 12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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