VRF157FL VRF157FLMP 50V, 600W, 80MHz D RF POWER VERTICAL MOSFET The VRF157FL is a gold-metallized silicon n-channel RF power transis- tor designed for broadband commercial and military applications requiring S S high power and gain without compromising reliability, ruggedness, or inter- modulation distortion. G FEATURES Improved Ruggedness V = 170V 70:1 Load VSWR Capability at Specified Operating Conditions (BR)DSS Designed for 2-100mHz Operation Nitride Passivated 600W with 21dB Typical Gain 30MHz, 50V Economical Flangeless Package Excellent Stability & Low IMD Refractory Gold Metallization Common Source Configuration High Voltage Replacement for MRF157 Available in Matched Pairs RoHS Compliant Maximum Ratings All Ratings: T =25C unless otherwise specified C Symbol Parameter VRF157FL(MP) Unit V Drain-Source Voltage 170 V DSS I Continuous Drain Current T = 25C 60 A D C V Gate-Source Voltage 40 V GS P D Total Device dissipation T = 25C 1350 W C T Storage Temperature Range -65 to 150 STG C T Operating Junction Temperature Max 200 J Static Electrical Characteristics Symbol Parameter Min Typ Max Unit V Drain-Source Breakdown Voltage (V = 0V, I = 100mA) 170 180 (BR)DSS GS D V V On State Drain Voltage (I = 40A, V = 10V) 3.7 5.7 DS(ON) D(ON) GS I Zero Gate Voltage Drain Current (V = 100V, V = 0V) 4.0 mA DSS DS GS I Gate-Source Leakage Current (V = 20V, V = 0V) 4.0 A GSS DS DS g Forward Transconductance (V = 10V, I = 20A) 16 mhos fs DS D V Gate Threshold Voltage (V = 10V, I = 100mA) 2.9 3.6 4.4 V GS(TH) DS D Thermal Characteristics Symbol Characteristic Min Typ Max Unit Junction to Case Thermal Resistance 0.13 C/W R JC Junction to Sink Thermal Resistance (Use High Efficiency Thermal Joint Compound and Planar Heat Sink 0.22 R JHS Surface.) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - Dynamic Characteristics VRF157FL(MP) Symbol Parameter Test Conditions Min Typ Max Unit C Input Capacitance V = 0V 1580 ISS GS C Output Capacitance V = 50V 810 pF oss DS C Reverse Transfer Capacitance f = 1MHz 65 rss Functional Characteristics Symbol Parameter Min Typ Max Unit G f = 30MHz, V = 50V, I = 800mA, P = 600W 17 21 dB PS DD DQ out f = 30MHz, V = 50V, I = 800mA, P = 600W 45 % D DD DQ out PEP 1 IMD f1 = 30MHz, f2 = 30.001MHz, V = 50V, I = 800mA, P = 600W -25 dBc (d3) DD DQ out PEP f = 30MHz, V = 50V, I = 800mA, P = 600W CW DD DQ out No Degradation in Output Power 70:1 VSWR - All Phase Angles, 0.2mSec X 20% Duty Factor 1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone Microsemi reserves the right to change, without notice, the specifications and information contained herein. Typical Performance Curves 100 45 250s PULSE TEST<0.5 % DUTY 5.5V 90 CYCLE 40 80 T = -55C J 35 70 T = 25C 30 J 4.5V 60 25 50 20 40 3.5V 15 30 10 20 2.5V T = 125C J 5 10 1.5V .5V 0 0 0 2 4 6 8 10 0 2 4 6 8 10 V , DRAIN-TO-SOURCE VOLTAGE (V) V , GATE-TO-SOURCE VOLTAGE (V) DS(ON) GS FIGURE 1, Output Characteristics FIGURE 2, Transfer Characteristics 100 1.0E8 C I iss DMax 1.0E9 C oss 10 R ds(on) PD Max 1.0E10 C rss T = 125C J T = 75C C 1 1.0E11 1 10 100 180 0.1 25 50 75 100 V , DRAIN-TO-SOURCE VOLTAGE (V) V , DRAIN-TO-SOURCE VOLTAGE (V) DS DS FIGURE 3, Capacitance vs Drain-to-Source Voltage FIGURE 4, Forward Safe Operating Area 050-4940 Rev I 10-2020 C, CAPACITANCE (F) I , DRAIN CURRENT (A) D I , DRAIN CURRENT (A) I , DRAIN CURRENT (V) D D BVdss Line