LET16060C STMicroelectronics

LET16060C RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs Datasheet - production data Features Excellent thermal stability Common source configuration P ( 28 V)= 60 W with 13.8 dB gain OUT 1600 MHz BeO free package In compliance with the 2002/95/EC European directive M243 epoxy sealed Description The LET16060C is a common source N-channel enhancement-mode lateral field-effect RF power Figure 1. Pin out transistor designed for broadband commercial and industrial applications at frequencies up to 1.6 GHz. The LET16060C is designed for high gain and broadband performance operating in 1 common source mode at 28 V. It is ideal for INMARSAT satellite communications. 3 2 1. Drain 3. Source 2. Gate Table 1. Device summary Order code Package Branding LET16060C M243 LET16060C April 2014 DocID022249 Rev 3 1/9 This is information on a product in full production. www.st.comMaximum ratings LET16060C 1 Maximum ratings Table 2. Absolute maximum ratings (T = 25 C) CASE Symbol Parameter Value Unit V Drain-source voltage 80 V (BR)DSS V Gate-source voltage -0.5 to +15 V GS I Drain current 12 A D P Power dissipation ( T = 70 C) 100 W DISS C T Max. operating junction temperature 200 C J T Storage temperature -65 to +150 C STG Table 3. Thermal data Symbol Parameter Value Unit R Junction-case thermal resistance 1.3 C/W th(JC) 2/9 DocID022249 Rev 3