Product Information

LET20030C

LET20030C electronic component of STMicroelectronics

Datasheet
Transistors RF MOSFET RF PWR Trans Ldmost Family
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 72.3852 ea
Line Total: USD 72.39

40 - Global Stock
Ships to you between
Thu. 16 May to Wed. 22 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
40 - WHS 1


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 1
Multiples : 1

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LET20030C
STMicroelectronics

1 : USD 72.3852

40 - WHS 2


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 1
Multiples : 1

Stock Image

LET20030C
STMicroelectronics

1 : USD 76.817

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Operating Frequency
Gain
Output Power
Configuration
Pd - Power Dissipation
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Series
Transistor Type
Brand
Factory Pack Quantity :
Vgs - Gate-Source Breakdown Voltage
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

LET20030C RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs Preliminary data Features Excellent thermal stability Common source configuration P ( 28 V) = 45 W with 13.9 dB gain OUT 2000 MHz P ( 36 V) = 53 W with 13.3 dB gain OUT 2000 MHz BeO free package M243 epoxy sealed In compliance with the 2002/95/EC European directive Figure 1. Pin out Description The LET20030C is a common source N-channel enhancement-mode lateral field-effect RF power 1 transistor designed for broadband commercial and industrial applications at frequencies up to 2 3 GHz. The LET20030C is designed for high gain and broadband performance operating in 2 common source mode at 36 V. It is ideal for base station applications requiring high linearity. 1. Drain 3. Source 2. Gate Table 1. Device summary Order code Package Branding LET20030C M243 LET20030C July 2011 Doc ID 019038 Rev 1 1/9 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com 9 change without notice.Maximum ratings LET20030C 1 Maximum ratings Table 2. Absolute maximum ratings (T = 25 C) CASE Symbol Parameter Value Unit V Drain-source voltage 80 V (BR)DSS V Gate-source voltage -0.5 to +15 V GS I Drain current 9 A D P Power dissipation ( T = 70 C) 108 W DISS C T Max. operating junction temperature 200 C J T Storage temperature -65 to +150 C STG Table 3. Thermal data Symbol Parameter Value Unit R Junction-case thermal resistance 1.2 C/W th(JC) 2/9 Doc ID 019038 Rev 1

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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