LET20030C STMicroelectronics

LET20030C RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs Preliminary data Features Excellent thermal stability Common source configuration P ( 28 V) = 45 W with 13.9 dB gain OUT 2000 MHz P ( 36 V) = 53 W with 13.3 dB gain OUT 2000 MHz BeO free package M243 epoxy sealed In compliance with the 2002/95/EC European directive Figure 1. Pin out Description The LET20030C is a common source N-channel enhancement-mode lateral field-effect RF power 1 transistor designed for broadband commercial and industrial applications at frequencies up to 2 3 GHz. The LET20030C is designed for high gain and broadband performance operating in 2 common source mode at 36 V. It is ideal for base station applications requiring high linearity. 1. Drain 3. Source 2. Gate Table 1. Device summary Order code Package Branding LET20030C M243 LET20030C July 2011 Doc ID 019038 Rev 1 1/9 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com 9 change without notice.Maximum ratings LET20030C 1 Maximum ratings Table 2. Absolute maximum ratings (T = 25 C) CASE Symbol Parameter Value Unit V Drain-source voltage 80 V (BR)DSS V Gate-source voltage -0.5 to +15 V GS I Drain current 9 A D P Power dissipation ( T = 70 C) 108 W DISS C T Max. operating junction temperature 200 C J T Storage temperature -65 to +150 C STG Table 3. Thermal data Symbol Parameter Value Unit R Junction-case thermal resistance 1.2 C/W th(JC) 2/9 Doc ID 019038 Rev 1