X-On Electronics has gained recognition as a prominent supplier of LET20030C RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. LET20030C RF MOSFET Transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

LET20030C STMicroelectronics

Name: LET20030C
Brand: STMicroelectronics
SKU: LET20030C_STMicroelectronics
Availability: InStock
Rating: 5 (11 reviews)

LET20030C electronic component of STMicroelectronics

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See Product Specifications

Part No.	LET20030C
Manufacturer:	STMicroelectronics
Category:	RF MOSFET Transistors
Description:	Transistors RF MOSFET RF PWR Trans Ldmost Family
Datasheet:	LET20030C Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 77.701 ea
Line Total: USD 77.7

Availability - 40
Ship by Tue. 11 Mar to Mon. 17 Mar

MOQ: 1 Multiples: 1
Pack Size: 1

LET20030C More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

40

Ship by Tue. 11 Mar to Mon. 17 Mar

MOQ : 1
Multiples : 1

1 : USD 77.701

40

Ship by Tue. 11 Mar to Mon. 17 Mar

MOQ : 1
Multiples : 1

1 : USD 77.701

Specifications

Manufacturer

STMicroelectronics STMicroelectronics

Product Category

RF MOSFET Transistors RF MOSFET Transistors

RoHS - XON

Y Y

Transistor Polarity

N - Channel N - Channel

Technology

Ldmos Ldmos

Id - Continuous Drain Current

160 A 160 A

Vds - Drain-Source Breakdown Voltage

75 V 75 V

Operating Frequency

2 GHz 2 GHz

Gain

13.9 Db 13.9 Db

Output Power

45 W 45 W

Configuration

Dual Common Source Dual Common Source

Pd - Power Dissipation

108 W 108 W

Maximum Operating Temperature

+ 200 C + 200 C

Mounting Style

Smd/Smt Smd/Smt

Package / Case

M243 M243

Packaging

Bulk Bulk

Vgs - Gate-Source Voltage

80 V 80 V

Series

Let20030 Let20030

Transistor Type

Ldmos Power Ldmos Power

Brand

Stmicroelectronics Stmicroelectronics

Factory Pack Quantity :

25 25

Vgs - Gate-Source Breakdown Voltage

80 V 80 V

Cnhts

8541210000 8541210000

Hts Code

8541290095 8541290095

Mxhts

85412999 85412999

Product Type

Rf Mosfet Transistors Rf Mosfet Transistors

Subcategory

Mosfets Mosfets

Taric

8541290000 8541290000

Notes:- Show Stocked Products With Similar Attributes.

LET20030C Alternative Parts

We are delighted to provide the LET20030C from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the LET20030C and other electronic components in the RF MOSFET Transistors category and beyond.

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Additional Infomation About Product

LET20030C RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs Preliminary data Features Excellent thermal stability Common source configuration P ( 28 V) = 45 W with 13.9 dB gain OUT 2000 MHz P ( 36 V) = 53 W with 13.3 dB gain OUT 2000 MHz BeO free package M243 epoxy sealed In compliance with the 2002/95/EC European directive Figure 1. Pin out Description The LET20030C is a common source N-channel enhancement-mode lateral field-effect RF power 1 transistor designed for broadband commercial and industrial applications at frequencies up to 2 3 GHz. The LET20030C is designed for high gain and broadband performance operating in 2 common source mode at 36 V. It is ideal for base station applications requiring high linearity. 1. Drain 3. Source 2. Gate Table 1. Device summary Order code Package Branding LET20030C M243 LET20030C July 2011 Doc ID 019038 Rev 1 1/9 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com 9 change without notice.Maximum ratings LET20030C 1 Maximum ratings Table 2. Absolute maximum ratings (T = 25 C) CASE Symbol Parameter Value Unit V Drain-source voltage 80 V (BR)DSS V Gate-source voltage -0.5 to +15 V GS I Drain current 9 A D P Power dissipation ( T = 70 C) 108 W DISS C T Max. operating junction temperature 200 C J T Storage temperature -65 to +150 C STG Table 3. Thermal data Symbol Parameter Value Unit R Junction-case thermal resistance 1.2 C/W th(JC) 2/9 Doc ID 019038 Rev 1

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

C-Max may also be referenced as

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ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
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Availability	Price	Buy Price	Quantity
40 Ship by Tue. 11 Mar to Mon. 17 Mar MOQ : 1 Multiples : 1	1 : USD 77.701

40 Ship by Tue. 11 Mar to Mon. 17 Mar MOQ : 1 Multiples : 1	1 : USD 77.701

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