LET9045C STMicroelectronics

LET9045C RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features Excellent thermal stability Common source configuration P ( 28 V) = 45 W with 18.5 dB gain 960 OUT MHz P ( 36V) = 70 W with 18.5 dB gain 960 OUT MHz BeO free package M243 epoxy sealed In compliance with the 2002/95/EC European directive Figure 1. Pin out Description The LET9045C is a common source N-channel enhancement-mode lateral field-effect RF power 1 transistor designed for broadband commercial and industrial applications at frequencies up to 3 1.0 GHz. The LET9045C is designed for high gain and broadband performance operating in 2 common source mode at 28 V. It is ideal for base station applications requiring high linearity. 1. Drain 3. Source 2. Gate Table 1. Device summary Order code Package Branding LET9045C M243 LET9045C April 2011 Doc ID 15443 Rev 4 1/10 www.st.com 10Maximum ratings LET9045C 1 Maximum ratings Table 2. Absolute maximum ratings (T = 25 C) CASE Symbol Parameter Value Unit V Drain-source voltage 80 V (BR)DSS V Gate-source voltage -0.5 to +15 V GS I Drain current 9 A D P Power dissipation ( T = 70 C) 108 W DISS C T Max. operating junction temperature 200 C J T Storage temperature -65 to +150 C STG Table 3. Thermal data Symbol Parameter Value Unit R Junction-case thermal resistance 1.2 C/W th(JC) 2/10 Doc ID 15443 Rev 4