PD85025-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features Excellent thermal stability Common source configuration P = 25 W with 15.7 dB gain 870 MHz / OUT 13.6 V Plastic package PowerSO-10RF (formed lead) ESD protection In compliance with the 2002/95/EC European directive Description The PD85025-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It PowerSO-10RF operates at 13.6 V in common source mode at (straight lead) frequencies of up to 1 GHz. PD85025-E boasts the excellent gain, linearity and reliability of STs Figure 1. Pin connection latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Source PD85025-Es superior linearity performance makes it an ideal solution for car mobile radio. The PowerSO-10 plastic package, designed to Drain offer high reliability, is the first ST JEDEC Gate approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Table 1. Device summary Order codes Package Packing PD85025-E PowerSO-10RF (formed lead) Tube PD85025S-E PowerSO-10RF (straight lead) PD85025TR-E PowerSO-10RF (formed lead) Tape and reel PD85025STR-E PowerSO-10RF (straight lead) June 2011 Doc ID 13593 Rev 3 1/16 www.st.com 16Contents PD85025-E Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static . 4 2.2 Dynamic . 4 2.3 ESD protection characteristics 4 2.4 Moisture sensitivity level . 4 3 Impedance . 5 4 Typical performance . 6 5 Package mechanical data . 9 6 Revision history . 14 2/16 Doc ID 13593 Rev 3