PD85035-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features Excellent thermal stability Common source configuration P = 35 W with 14.9 dB gain 870 MHz / OUT 13.6 V Plastic package PowerSO-10RF (formed lead) ESD protection In compliance with the 2002/95/EC1 European directive Description The PD85035-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It PowerSO-10RF operates at 13.6 V in common source mode at (straight lead) frequencies of up to 1 GHz. PD85035-E boasts the excellent gain, linearity and reliability of STs Figure 1. Pin connection latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Source PD85035-Es superior linearity performance makes it an ideal solution for car mobile radio. The PowerSO-10 plastic package, designed to Drain offer high reliability, is the first ST JEDEC Gate approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294). Table 1. Device summary Order codes Package Packing PD85035-E PowerSO-10RF (formed lead) Tube PD85035S-E PowerSO-10RF (straight lead) Tube PD85035TR-E PowerSO-10RF (formed lead) Tape and reel PD85035STR-E PowerSO-10RF (straight lead) Tape and reel May 2011 Doc ID 13597 Rev 3 1/16 www.st.com 16Contents PD85035-E Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static . 4 2.2 Dynamic . 4 2.3 ESD protection characteristics 4 2.4 Moisture sensitivity level . 4 3 Impedance . 5 4 Typical performance . 6 5 Package mechanical data . 9 6 Revision history . 15 2/16 Doc ID 13597 Rev 3