PD55015TR-E STMicroelectronics

PD55015-E RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs Features Excellent thermal stability Common source configuration P =15 W with 14dB gain 500 MHz/12.5 V OUT PowerSO-10RF Description (formed lead) The PD55015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. The PD55015-E boasts the excellent gain, linearity and reliability thanks to STs latest LDMOS technology mounted PowerSO-10RF in the first true SMD plastic RF power package, (straight lead) the PowerSO-10RF. The PD55015-Es superior linearity performance makes it an ideal solution for car mobile radios. Figure 1. Pin connection The PowerSO-10RF plastic package is designed Source for high reliability, and is the first JEDEC- approved, high power SMD package from ST. It has been optimized for RF requirements and offers excellent RF performance and ease of Drain assembly. Gate Mounting recommendations are provided in application note AN1294, available on www.st.com. Table 1. Device summary Order code Package Packing PD55015-E PowerSO-10RF (formed lead) Tube PD55015S-E PowerSO-10RF (straight lead) Tube PD55015TR-E PowerSO-10RF (formed lead) Tape and reel PD55015STR-E PowerSO-10RF (straight lead) Tape and reel August 2011 Doc ID 12596 Rev 3 1/25 www.st.com 25Contents PD55015-E Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static . 4 2.2 Dynamic . 4 2.3 Moisture sensitivity level . 4 3 Impedance . 5 4 Typical performance . 6 4.1 Performance related to the PowerSO-10RF formed lead 7 4.2 Performance related to the PowerSO-10RF straight lead . 9 5 Test circuit 11 6 Circuit layout 12 7 Common source s-parameter 13 8 Package mechanical data 19 9 Revision history . 24 2/25 Doc ID 12596 Rev 3