X-On Electronics has gained recognition as a prominent supplier of PD55003S-E RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. PD55003S-E RF MOSFET Transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

PD55003S-E STMicroelectronics

Name: PD55003S-E
Brand: STMicroelectronics
SKU: PD55003SE_STMicroelectronics
Availability: InStock
Rating: 5 (11 reviews)

PD55003S-E electronic component of STMicroelectronics

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Part No.	PD55003S-E
Manufacturer:	STMicroelectronics
Category:	RF MOSFET Transistors
Description:	Trans RF MOSFET N-CH 40V 2.5A 3-Pin PowerSO-10RF (Straight lead) Tube
Datasheet:	PD55003S-E Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 13.7939 ea
Line Total: USD 13.79

Availability - 2
Ship by Thu. 05 Dec to Tue. 10 Dec

MOQ: 1 Multiples: 1
Pack Size: 1

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Availability Price Buy Price Quantity

2

Ship by Thu. 05 Dec to Tue. 10 Dec

MOQ : 1
Multiples : 1

1 : USD 13.7939
10 : USD 13.3513

Specifications

Manufacturer
STMicroelectronics STMicroelectronics

Product Category
RF MOSFET Transistors RF MOSFET Transistors

Id - Continuous Drain Current
2.5 A 2.5 A

Output Power
3 W (min) 3 W (min)

Pd - Power Dissipation
31700 (mW) 31700 (mW)

Packaging
Rail/Tube Rail/Tube

Mounting
Surface Mount Surface Mount

Operating Temp Range
- 65 C to 165 C - 65 C to 165 C

Pin Count
3 3

Number Of Elements
1 1

Channel Type
N N

Screening Level
Military Military

Channel Mode
Enhancement Enhancement

Rad Hardened
No No

Vswr Max
20(Min) 20(Min)

Frequency Max
1000 MHz 1000 MHz

Forward Transconductance Typ
1(S) 1(S)

Input Capacitance Typ Vds
36@12.5v pF 36@12.5v pF

Output Capacitance Typ Vds
24@12.5v pF 24@12.5v pF

Power Gain Typ Vds
17 (dB) 17 (dB)

Drain Efficiency Typ
52( % ) 52( % )

Reverse Capacitance Typ
2.4@12.5v pF 2.4@12.5v pF

Drain Source Voltage Max
40 V 40 V

Notes:- Show Stocked Products With Similar Attributes.

PD55003S-E Alternative Parts

We are delighted to provide the PD55003S-E from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PD55003S-E and other electronic components in the RF MOSFET Transistors category and beyond.

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Additional Infomation About Product

PD55003-E RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs Features Excellent thermal stability Common source configuration P = 3 W with 17dB gain 500 MHz / 12.5 V OUT PowerSO-10RF Description (formed lead) The PD55003-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. The PD55003 boasts excellent gain, linearity and reliability thanks to STs latest LDMOS technology mounted in the PowerSO-10RF first true SMD plastic RF power package, the (straight lead) PowerSO-10RF. The PD55003s superior linearity performance makes it an ideal solution for car mobile radios. Figure 1. Pin connection The PowerSO-10RF plastic package is designed Source for high reliability, and is the first JEDEC- approved, high power SMD package from ST. It has been optimized for RF requirements and offers excellent RF performance and ease of Drain Gate assembly. Mounting recommendations are provided in application note AN1294, available on www.st.com. Table 1. Device summary Order code Package Packing PD55003-E PowerSO-10RF (formed lead) Tube PD55003S-E PowerSO-10RF (straight lead) Tube PD55003TR-E PowerSO-10RF (formed lead) Tape and reel PD55003STR-E PowerSO-10RF (straight lead) Tape and reel August 2011 Doc ID 12273 Rev 4 1/29 www.st.com 29Contents PD55003-E Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static . 4 2.2 Dynamic . 4 2.3 Moisture sensitivity level . 4 3 Impedance . 5 4 Typical performance . 6 4.1 Performance for the PowerSO-10RF formed lead . 7 4.2 Performance for the PowerSO-10RF straight lead 10 5 Typical performance (860 MHz) . 12 5.1 Performance for the PowerSO-10RF formed lead 12 6 Test circuit 13 7 Circuit layout 15 8 Common source s-parameter 16 9 Package mechanical data 22 10 Revision history . 28 2/29 Doc ID 12273 Rev 4

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
2 Ship by Thu. 05 Dec to Tue. 10 Dec MOQ : 1 Multiples : 1	1 : USD 13.7939 10 : USD 13.3513

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