PD55025-E PD55025S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features Excellent thermal stability Common source configuration P = 25 W with 14.5dB gain 500 MHz / OUT 12.5 V PowerSO-10RF New RF plastic package (formed lead) Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies up to 1 GHz. The device boasts the PowerSO-10RF excellent gain, linearity and reliability of STs (straight lead) latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. The devices superior linearity performance Figure 1. Pin connection makes it an ideal solution for car mobile radio. The PowerSO-10 plastic package, designed to Source offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performance and ease of assembly. Drain Gate Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294). Table 1. Device summary Order code Package Packing PD55025-E PowerSO-10RF (formed lead) Tube PD55025S-E PowerSO-10RF (straight lead) Tube PD55015TR-E PowerSO-10RF (formed lead) Tape and reel PD55015STR-E PowerSO-10RF (straight lead) Tape and reel June 2010 Doc ID 12330 Rev 2 1/23 www.st.com 23Contents PD55025-E, PD55025S-E Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static . 4 2.2 Dynamic . 4 2.3 Moisture sensitivity level . 4 3 Impedance . 5 4 Typical performance . 6 5 Test circuit 11 6 Circuit layout 12 7 Common source s-parameter 14 8 Package mechanical data 17 9 Revision history . 22 2/23 Doc ID 12330 Rev 2