X-On Electronics has gained recognition as a prominent supplier of PD55035-E RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. PD55035-E RF MOSFET Transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

PD55035-E STMicroelectronics

Name: PD55035-E
Brand: STMicroelectronics
SKU: PD55035E_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

PD55035-E electronic component of STMicroelectronics

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Part No.	PD55035-E
Manufacturer:	STMicroelectronics
Category:	RF MOSFET Transistors
Description:	RF MOSFET Transistors RF Pwr Transistors LDMOST Plastic N Ch
Datasheet:	PD55035-E Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

400: USD 21.5319 ea
Line Total: USD 8612.76

Availability - 0

MOQ: 400 Multiples: 1
Pack Size: 1

PD55035-E More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Thu. 28 Nov to Wed. 04 Dec MOQ : 400 Multiples : 1	400 : USD 21.5319 4000 : USD 20.6607 40000 : USD 20.2474

0 Ship by Thu. 28 Nov to Wed. 04 Dec MOQ : 400 Multiples : 400	400 : USD 30.5392 500 : USD 29.7558 900 : USD 28.9724 2000 : USD 28.189 4000 : USD 27.5362

0 Ship by Thu. 28 Nov to Wed. 04 Dec MOQ : 1 Multiples : 1	1 : USD 23.0945

We are delighted to provide the PD55035-E from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PD55035-E and other electronic components in the RF MOSFET Transistors category and beyond.

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Additional Infomation About Product

PD55035-E PD55035S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features Excellent thermal stability Common source configuration P = 35 W with 16.9dB gain 500 MHz / OUT 12.5 V New RF plastic package PowerSO-10RF (formed lead) Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. The device boasts the PowerSO-10RF excellent gain, linearity and reliability of STs (straight lead) latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO- 10RF. Devices superior linearity performance Figure 1. Pin connection makes it an ideal solution for car mobile radio. The PowerSO-10 plastic package, designed to Source offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Drain Gate Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294). Table 1. Device summary Order code Package Packing PD55035-E PowerSO-10RF (formed lead) Tube PD55035S-E PowerSO-10RF (straight lead) Tube PD55035TR-E PowerSO-10RF (formed lead) Tape and reel PD55035STR-E PowerSO-10RF (straight lead) Tape and reel May 2010 Doc ID 12331 Rev 2 1/22 www.st.com 22Contents PD55035-E, PD55035S-E Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static . 4 2.2 Dynamic . 4 2.3 Moisture sensitivity level . 4 3 Impedance . 5 4 Typical performance . 6 5 Test circuit . 9 6 Typical performance 175 MHz 10 7 Common source s-parameter 12 8 Package mechanical data 16 9 Revision history . 21 2/22 Doc ID 12331 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Manufacturer STMicroelectronics STMicroelectronics
Product Category RF MOSFET Transistors RF MOSFET Transistors
RoHS - XON Y Y
Transistor Polarity N - Channel N - Channel
Technology Si Si
Id - Continuous Drain Current 7 A 7 A
Vds - Drain-Source Breakdown Voltage 40 V 40 V
Operating Frequency 1 GHz 1 GHz
Gain 16.9 Db At 500 Mhz 16.9 Db At 500 Mhz
Output Power 35 W 35 W
Configuration Single Single
Pd - Power Dissipation 95 W 95 W
Minimum Operating Temperature - 65 C - 65 C
Maximum Operating Temperature + 150 C + 150 C
Mounting Style Smd/Smt Smd/Smt
Package / Case POWERSO - 10RF (FORMED LEAD) POWERSO - 10RF (FORMED LEAD)
Packaging Tube Tube
Vgs - Gate-Source Voltage +/- 20 V +/- 20 V
Series Pd55035 - E Pd55035 - E
Height 3.5 mm 3.5 mm
Length 7.5 mm 7.5 mm
Type Rf Power Mosfet Rf Power Mosfet
Width 9.4 mm 9.4 mm
Brand Stmicroelectronics Stmicroelectronics
Channel Mode Enhancement Enhancement
Factory Pack Quantity : 400 400