PD20015-E RF power transistor, LdmoST family N-channel enhancement-mode lateral MOSFETs Datasheet production data Features Excellent thermal stability Common source configuration P = 15 W with 11 dB gain 2 GHz / 13.6 V OUT Plastic package ESD protection PowerSO-10RF (formed lead) In compliance with the 2002/95/EC European directive Description The PD20015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at PowerSO-10RF frequencies of up to 1 GHz. PD20015-E boasts (straight lead) the excellent gain, linearity and reliability of STs latest LDMOS technology mounted in the first true Figure 1. Pin connection SMD plastic RF power package, PowerSO-10RF. PD20015-Es superior linearity performance Source makes it an ideal solution for mobile radio applications. The PowerSO-10 plastic package, designed to Drain offer high reliability, is the first ST JEDEC Gate approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Table 1. Device summary Order codes Package Packing PD20015-E PowerSO-10RF (formed lead) Tube PD20015TR-E PowerSO-10RF (formed lead) Tape and reel PD20015STR-E PowerSO-10RF (straight lead) May 2012 Doc ID 14005 Rev 4 1/16 This is information on a product in full production. www.st.com 16Contents PD20015-E Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static . 4 2.2 Dynamic . 4 2.3 ESD protection characteristics 4 2.4 Moisture sensitivity level . 5 3 Impedance . 5 4 Typical performance . 6 5 Package mechanical data . 9 6 Revision history . 15 2/16 Doc ID 14005 Rev 4