X-On Electronics has gained recognition as a prominent supplier of PD20015-E RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. PD20015-E RF MOSFET Transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

PD20015-E STMicroelectronics

Name: PD20015-E
Brand: STMicroelectronics
SKU: PD20015E_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

PD20015-E electronic component of STMicroelectronics

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Part No.	PD20015-E
Manufacturer:	STMicroelectronics
Category:	RF MOSFET Transistors
Description:	Trans RF MOSFET N-CH 40V 7A 3-Pin PowerSO-10RF (Formed lead) Tube
Datasheet:	PD20015-E Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

N/A

Obsolete

PD20015-E More Buying Options & Price Grid(s)

Availability	Price	Quantity
0 MOQ : 1 Multiples : 1	1 : USD 26.9053 5 : USD 24.9298 10 : USD 24.0514 25 : USD 23.0894 50 : USD 21.8972 100 : USD 20.7156	N/A Obsolete

0 MOQ : 1 Multiples : 1	1 : USD 20.496 10 : USD 18.9068 25 : USD 18.0496 100 : USD 16.1426 500 : USD 15.4106	N/A Obsolete

0 MOQ : 200 Multiples : 200	200 : USD 21.7528	N/A Obsolete

We are delighted to provide the PD20015-E from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PD20015-E and other electronic components in the RF MOSFET Transistors category and beyond.

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Additional Infomation About Product

PD20015-E RF power transistor, LdmoST family N-channel enhancement-mode lateral MOSFETs Datasheet production data Features Excellent thermal stability Common source configuration P = 15 W with 11 dB gain 2 GHz / 13.6 V OUT Plastic package ESD protection PowerSO-10RF (formed lead) In compliance with the 2002/95/EC European directive Description The PD20015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at PowerSO-10RF frequencies of up to 1 GHz. PD20015-E boasts (straight lead) the excellent gain, linearity and reliability of STs latest LDMOS technology mounted in the first true Figure 1. Pin connection SMD plastic RF power package, PowerSO-10RF. PD20015-Es superior linearity performance Source makes it an ideal solution for mobile radio applications. The PowerSO-10 plastic package, designed to Drain offer high reliability, is the first ST JEDEC Gate approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Table 1. Device summary Order codes Package Packing PD20015-E PowerSO-10RF (formed lead) Tube PD20015TR-E PowerSO-10RF (formed lead) Tape and reel PD20015STR-E PowerSO-10RF (straight lead) May 2012 Doc ID 14005 Rev 4 1/16 This is information on a product in full production. www.st.com 16Contents PD20015-E Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static . 4 2.2 Dynamic . 4 2.3 ESD protection characteristics 4 2.4 Moisture sensitivity level . 5 3 Impedance . 5 4 Typical performance . 6 5 Package mechanical data . 9 6 Revision history . 15 2/16 Doc ID 14005 Rev 4

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Manufacturer STMicroelectronics STMicroelectronics
Product Category RF MOSFET Transistors RF MOSFET Transistors
Transistor Polarity N - Channel N - Channel
Technology Si Si
Id - Continuous Drain Current 7 A 7 A
Vds - Drain-Source Breakdown Voltage 40 V 40 V
Operating Frequency 2 GHz 2 GHz
Output Power 23 W (typ) 23 W (typ)
Configuration Single Single
Pd - Power Dissipation 79 W 79 W
Minimum Operating Temperature - 65 C - 65 C
Maximum Operating Temperature + 150 C + 150 C
Mounting Style Smd/Smt Smd/Smt
Package / Case POWERSO - 10RF - FORMED - 4 POWERSO - 10RF - FORMED - 4
Packaging Rail/Tube Rail/Tube
Vgs - Gate-Source Voltage 15 V 15 V
Series Pd20015 - E Pd20015 - E
Mounting Surface Mount Surface Mount
Operating Temp Range - 65 C to 165 C - 65 C to 165 C
Pin Count 3 3
Number Of Elements 1 1
Channel Type N N
Screening Level Military Military
Channel Mode Enhancement Enhancement
Rad Hardened No No
Vswr Max 20(Min) 20(Min)
Frequency Max 2000 MHz 2000 MHz
Input Capacitance Typ Vds 55@12.5v pF 55@12.5v pF
Output Capacitance Typ Vds 40@12.5v pF 40@12.5v pF
Power Gain Typ Vds 11 (dB) 11 (dB)
Drain Efficiency Typ 53( % ) 53( % )
Reverse Capacitance Typ 1.5@12.5v pF 1.5@12.5v pF
Drain Source Voltage Max 40 V 40 V
Height 3.5 mm 3.5 mm
Length 7.5 mm 7.5 mm
Width 9.4 mm 9.4 mm
Brand Stmicroelectronics Stmicroelectronics
Cnhts 8541210000 8541210000
Hts Code 8541290075 8541290075
Mxhts 85412101 85412101