PD55003L-E STMicroelectronics

PD55003L-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features Excellent thermal stability Common source configuration P =3 W mith 17dB gain 500 MHz/12.5 V OUT New leadless plastic package ESD protection Supplied in tape and reel of 3 K units In compliance with 2002/95/EC european directive PowerFLAT(5x5) Description The PD55003L-E is a common source N-channel, enhancement-mode lateral field-effect RF power Figure 1. Pin configuration transistor. It is designed for high gain, broadband commercial and industrial application. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55003L-E boasts the excellent gain, linearity and reliability of STH1LV latest LD- MOS technology mounted in the innovative leadless SMD plastic package, PowerFLAT. PD55003L-Es superior linearity performances makes it an ideal solution for car mobile radio. TOP VIEW Table 1. Device summary Order code Marking Package Packaging PD55003L-E 55003 PowerFLAT(5x5) Tape and reel April 2011 Doc ID 12089 Rev 2 1/18 www.st.com 18Contents PD55003L-E Contents Contents 2 1 Maximum ratings 3 2 Electrical specification . 4 3 Impedance . 5 3.1 Typical performances . 6 3.2 Typical performance (broadband) 8 4 Test circuit . 9 5 Package mechanical data 14 6 Revision history . 17 2/18 Doc ID 12089 Rev 2