Supertex inc. LND150 N-Channel Depletion-Mode DMOS FET Features General Description Free from secondary breakdown The LND150 is a high voltage N-channel depletion mode Low power drive requirement (normally-on) transistor utilizing Supertexs lateral DMOS Ease of paralleling technology. The gate is ESD protected. Excellent thermal stability Integral source-drain diode The LND150 is ideal for high voltage applications in the High input impedance and low C areas of normally-on switches, precision constant current ISS ESD gate protection sources, voltage ramp generation and amplification. Applications Solid state relays Normally-on switches Converters Power supply circuits Constant current sources Input protection circuits Product Summary Ordering Information R I BV /BV Part Number Package Options Packing DS(ON) DSS DSX DGX (V) (max) (min) LND150K1-G TO-236AB (SOT-23) 3000/Reel 500 1.0k 1.0mA LND150N3-G TO-92 1000/Bag LND150N3-G P002 TO-92 2000/Reel Pin Configuration LND150N3-G P003 TO-92 2000/Reel LND150N3-G P005 TO-92 2000/Reel LND150N3-G P013 TO-92 2000/Reel DRAIN LND150N3-G P014 TO-92 2000/Reel SOURCE LND150N8-G TO-243AA (SOT-89) 2000/Reel GATE -G denotes a lead (Pb)-free / RoHS compliant package TO-92 Absolute Maximum Ratings SOURCE Parameter Value SOURCE Drain-to-source BV DSX DRAIN DRAIN Drain-to-gate BV DGX SOURCE GATE GATE Gate-to-source 20V TO-236AB (SOT-23) TO-243AA (SOT-89) O O Operating and storage temperature -55 C to +150 C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. Product Marking SiLN YY = Year Sealed W = Code for Week Sealed D150 W = Code for Week Sealed WW = Week Sealed NDEW LN1EW = Green Packaging YYWW = Green Packaging = Green Packaging TO-236AB (SOT-23) TO-92 TO-243AA (SOT-89) Packages may or may not include the following marks: Si or Doc. DSFP-LND150 Supertex inc. C041114 www.supertex.comLND150 Thermal Characteristics I I Power Dissipation D D I I ja DR DRM O Package (continuous) (pulsed) T = 25 C A O ( C/W) (mA) (mA) (mA) (mA) (W) TO-236AB (SOT-23) 13 30 0.36 203 13 30 TO-92 30 30 0.74 132 30 30 TO-243AA (SOT-89) 30 30 1.6 133 30 30 Notes: I (continuous) is limited by max rated T. D j O Electrical Characteristics (T = 25 C unless otherwise specified) A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage 500 - - V V = -10V, I = 1.0mA DSX GS D V Gate-to-source off voltage -1.0 - -3.0 V V = 25V, I = 100nA GS(OFF) GS D O V Change in V with temperature - - 5.0 mV/ C V = 25V, I = 100nA GS(OFF) GS(OFF) GS D I Gate body leakage current - - 100 nA V = 20V, V = 0V GSS GS DS - - 100 nA V = -10V, V = 450V GS DS I Drain-to-source leakage current V = 0.8V Max Rating, D(OFF) DS - - 100 A O V = -10V, T = 125 C GS A I Saturated drain-to-source current 1.0 - 3.0 mA V = 0V, V = 25V DSS GS DS R Static drain-to-source on-state resistance - 850 1000 V = 0V, I = 0.5mA DS(ON) GS D O R Change in R with temperature - - 1.2 %/ C V = 0V, I = 0.5mA DS(ON) DS(ON) GS D G Forward transductance 1.0 2.0 - m V = 0V, I = 1.0mA FS DS D C Input capacitance - 7.5 10 ISS V = -10V, GS C Common source output capacitance - 2.0 3.5 pF V = 25V, OSS DS f = 1.0MHz C Reverse transfer capacitance - 0.5 1.0 RSS t Turn-on delay time - 0.09 - d(ON) V = 25V, DD t Rise time - 0.45 - r s I = 1.0mA, D t Turn-off delay time - 0.1 - d(OFF) R = 25 GEN t Fall time - 1.3 - f V Diode forward voltage drop - - 0.9 V V = -10V, I = 1.0mA SD GS SD t Reverse recovery time - 200 - ns V = -10V, I = 1.0mA rr GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V 90% VDD INPUT Pulse R L 10% Generator -10V OUTPUT t t (ON) (OFF) R GEN t t t t d(OFF) f d(ON) r VDD INPUT D.U.T. 10% 10% OUTPUT 90% 90% 0V Doc. DSFP-LND150 Supertex inc. C041114 2 www.supertex.com