X-On Electronics has gained recognition as a prominent supplier of LND150K1-G MOSFETs across the USA, India, Europe, Australia, and various other global locations. LND150K1-G MOSFETs are a product manufactured by Microchip. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

LND150K1-G Microchip

LND150K1-G electronic component of Microchip
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Part No.LND150K1-G
Manufacturer: Microchip
Category: MOSFETs
Description: MOSFET N Trench 500V 13mA (Tj) 1000 Ω @ 500uA,0V SOT-23 (SOT-23-3) RoHS
Datasheet: LND150K1-G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.496 ea
Line Total: USD 0.5 
Availability - 11093
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
55290
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.4373
6000 : USD 0.433
9000 : USD 0.4287
12000 : USD 0.4244
15000 : USD 0.4201
27000 : USD 0.4159
51000 : USD 0.4118

12
Ship by Wed. 27 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 0.5405
10 : USD 0.5276
30 : USD 0.5204
100 : USD 0.5111

11093
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 0.496
25 : USD 0.428
100 : USD 0.3834

386
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 1.3977
5 : USD 0.8413
23 : USD 0.7463
25 : USD 0.7219
63 : USD 0.7056

2771
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 14
Multiples : 1
14 : USD 0.5839
25 : USD 0.5748
100 : USD 0.5657
250 : USD 0.5567
500 : USD 0.5476
1000 : USD 0.5385

4517
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 84
Multiples : 1
84 : USD 0.4709
200 : USD 0.4693
500 : USD 0.4631
3000 : USD 0.4599

386
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 100
Multiples : 1
100 : USD 0.7411

55290
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.5351
6000 : USD 0.5298
9000 : USD 0.5244
12000 : USD 0.5192
15000 : USD 0.5141

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Power Dissipation
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the LND150K1-G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the LND150K1-G and other electronic components in the MOSFETs category and beyond.

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Supertex inc. LND150 N-Channel Depletion-Mode DMOS FET Features General Description Free from secondary breakdown The LND150 is a high voltage N-channel depletion mode Low power drive requirement (normally-on) transistor utilizing Supertexs lateral DMOS Ease of paralleling technology. The gate is ESD protected. Excellent thermal stability Integral source-drain diode The LND150 is ideal for high voltage applications in the High input impedance and low C areas of normally-on switches, precision constant current ISS ESD gate protection sources, voltage ramp generation and amplification. Applications Solid state relays Normally-on switches Converters Power supply circuits Constant current sources Input protection circuits Product Summary Ordering Information R I BV /BV Part Number Package Options Packing DS(ON) DSS DSX DGX (V) (max) (min) LND150K1-G TO-236AB (SOT-23) 3000/Reel 500 1.0k 1.0mA LND150N3-G TO-92 1000/Bag LND150N3-G P002 TO-92 2000/Reel Pin Configuration LND150N3-G P003 TO-92 2000/Reel LND150N3-G P005 TO-92 2000/Reel LND150N3-G P013 TO-92 2000/Reel DRAIN LND150N3-G P014 TO-92 2000/Reel SOURCE LND150N8-G TO-243AA (SOT-89) 2000/Reel GATE -G denotes a lead (Pb)-free / RoHS compliant package TO-92 Absolute Maximum Ratings SOURCE Parameter Value SOURCE Drain-to-source BV DSX DRAIN DRAIN Drain-to-gate BV DGX SOURCE GATE GATE Gate-to-source 20V TO-236AB (SOT-23) TO-243AA (SOT-89) O O Operating and storage temperature -55 C to +150 C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. Product Marking SiLN YY = Year Sealed W = Code for Week Sealed D150 W = Code for Week Sealed WW = Week Sealed NDEW LN1EW = Green Packaging YYWW = Green Packaging = Green Packaging TO-236AB (SOT-23) TO-92 TO-243AA (SOT-89) Packages may or may not include the following marks: Si or Doc. DSFP-LND150 Supertex inc. C041114 www.supertex.comLND150 Thermal Characteristics I I Power Dissipation D D I I ja DR DRM O Package (continuous) (pulsed) T = 25 C A O ( C/W) (mA) (mA) (mA) (mA) (W) TO-236AB (SOT-23) 13 30 0.36 203 13 30 TO-92 30 30 0.74 132 30 30 TO-243AA (SOT-89) 30 30 1.6 133 30 30 Notes: I (continuous) is limited by max rated T. D j O Electrical Characteristics (T = 25 C unless otherwise specified) A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage 500 - - V V = -10V, I = 1.0mA DSX GS D V Gate-to-source off voltage -1.0 - -3.0 V V = 25V, I = 100nA GS(OFF) GS D O V Change in V with temperature - - 5.0 mV/ C V = 25V, I = 100nA GS(OFF) GS(OFF) GS D I Gate body leakage current - - 100 nA V = 20V, V = 0V GSS GS DS - - 100 nA V = -10V, V = 450V GS DS I Drain-to-source leakage current V = 0.8V Max Rating, D(OFF) DS - - 100 A O V = -10V, T = 125 C GS A I Saturated drain-to-source current 1.0 - 3.0 mA V = 0V, V = 25V DSS GS DS R Static drain-to-source on-state resistance - 850 1000 V = 0V, I = 0.5mA DS(ON) GS D O R Change in R with temperature - - 1.2 %/ C V = 0V, I = 0.5mA DS(ON) DS(ON) GS D G Forward transductance 1.0 2.0 - m V = 0V, I = 1.0mA FS DS D C Input capacitance - 7.5 10 ISS V = -10V, GS C Common source output capacitance - 2.0 3.5 pF V = 25V, OSS DS f = 1.0MHz C Reverse transfer capacitance - 0.5 1.0 RSS t Turn-on delay time - 0.09 - d(ON) V = 25V, DD t Rise time - 0.45 - r s I = 1.0mA, D t Turn-off delay time - 0.1 - d(OFF) R = 25 GEN t Fall time - 1.3 - f V Diode forward voltage drop - - 0.9 V V = -10V, I = 1.0mA SD GS SD t Reverse recovery time - 200 - ns V = -10V, I = 1.0mA rr GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V 90% VDD INPUT Pulse R L 10% Generator -10V OUTPUT t t (ON) (OFF) R GEN t t t t d(OFF) f d(ON) r VDD INPUT D.U.T. 10% 10% OUTPUT 90% 90% 0V Doc. DSFP-LND150 Supertex inc. C041114 2 www.supertex.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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