X-On Electronics has gained recognition as a prominent supplier of LND150N3-G MOSFETs across the USA, India, Europe, Australia, and various other global locations. LND150N3-G MOSFETs are a product manufactured by Microchip. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

LND150N3-G Microchip

LND150N3-G electronic component of Microchip
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Part No.LND150N3-G
Manufacturer: Microchip
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 500V; 0.03A; 740mW; TO92
Datasheet: LND150N3-G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4766 ea
Line Total: USD 0.48 
Availability - 460
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
6353
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 50
Multiples : 50
50 : USD 0.7038
250 : USD 0.5625
1000 : USD 0.554
3000 : USD 0.5458
5000 : USD 0.5376
8000 : USD 0.5295
10000 : USD 0.5215
15000 : USD 0.5138

460
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 0.4766
25 : USD 0.4451
100 : USD 0.4186

4547
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5973
100 : USD 0.5324
500 : USD 0.4862

486
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 3
Multiples : 1
3 : USD 1.0598
10 : USD 0.9548
21 : USD 0.8148
25 : USD 0.7896
58 : USD 0.77

6353
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 100
Multiples : 50
100 : USD 0.9795
250 : USD 0.8519
1000 : USD 0.7772
3000 : USD 0.7241
5000 : USD 0.683

509
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 13
Multiples : 1
13 : USD 0.4766
25 : USD 0.4451
100 : USD 0.4186

496
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 94
Multiples : 1
94 : USD 0.8136
100 : USD 0.8121

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
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Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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Transistor Type
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We are delighted to provide the LND150N3-G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the LND150N3-G and other electronic components in the MOSFETs category and beyond.

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LND150 N-Channel Depletion-Mode DMOS FET Features General Description Free from secondary breakdown The LND150 is a high voltage N-channel depletion mode Low power drive requirement (normally-on) transistor utilizing Supertexs lateral DMOS Ease of paralleling technology. The gate is ESD protected. Excellent thermal stability Integral source-drain diode The LND150 is ideal for high voltage applications in the High input impedance and low C areas of normally-on switches, precision constant current ISS ESD gate protection sources, voltage ramp generation and amplication. Applications Solid state relays Normally-on switches Converters Power supply circuits Constant current sources Input protection circuits Ordering Information R I Package Options DS(ON) DSS BV /BV DSX DGX Device (max) (min) (V) TO-236AB (SOT-23) TO-92 TO-243AA (SOT-89) (K) (mA) LND150 LND150K1-G LND150N3-G LND150N8-G 500 1.0 1.0 -G indicates package is RoHS compliant (Green) Pin Congurations DRAIN Absolute Maximum Ratings SOURCE Parameter Value GATE Drain-to-source BV DSX TO-92 (N3) Drain-to-gate BV DGX Gate-to-source 20V SOURCE SOURCE O O Operating and storage temperature -55 C to +150 C O Soldering temperature* 300 C DRAIN DRAIN Absolute Maximum Ratings are those values beyond which damage to the device SOURCE may occur. Functional operation under these conditions is not implied. Continuous GATE GATE operation of the device at the absolute rating level may affect device reliability. All TO-236AB (SOT-23) (K1) TO-243AA (SOT-89) (N8) voltages are referenced to device ground. * Distance of 1.6mm from case for 10 seconds. Product Marking S i L N YY = Year Sealed W = Code for Week Sealed D 1 5 0 W = Code for Week Sealed WW = Week Sealed N D E W L N 1 E W = Green Packaging Y Y W W = Green Packaging = Green Packaging TO-236AB (SOT-23) (K1) TO-92 (N3) TO-243AA (SOT-89) (N8) Packages may or may not include the following marks: Si or 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.comLND150 Thermal Characteristics I I Power Dissipation D D I I jc ja DR DRM O Package (continuous) (pulsed) T = 25 C A O O ( C/W) ( C/W) (mA) (mA) (mA) (mA) (W) TO-236AB (SOT-23) 13 30 0.36 200 350 13 30 TO-92 30 30 0.74 125 170 30 30 TO-243AA (SOT-89) 30 30 1.6 15 78 30 30 Notes: I (continuous) is limited by max rated T. D j Mounted on FR4 board, 25mm x 25mm x 1.57mm O Electrical Characteristics (T = 25 C unless otherwise specied) A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage 500 - - V V = -10V, I = 1.0mA DSX GS D V Gate-to-source off voltage -1.0 - -3.0 V V = 25V, I = 100nA GS(OFF) GS D O V Change in V with temperature - - 5.0 mV/ C V = 25V, I = 100nA GS(OFF) GS(OFF) GS D I Gate body leakage current - - 100 nA V = 20V, V = 0V GSS GS DS - - 100 nA V = -10V, V = 450V GS DS I Drain-to-source leakage current V = 0.8V Max Rating, D(OFF) DS - - 100 A O V = -10V, T = 125 C GS A I Saturated drain-to-source current 1.0 - 3.0 mA V = 0V, V = 25V DSS GS DS R Static drain-to-source on-state resistance - 850 1000 V = 0V, I = 0.5mA DS(ON) GS D O R Change in R with temperature - - 1.2 %/ C V = 0V, I = 0.5mA DS(ON) DS(ON) GS D G Forward transductance 1.0 2.0 - m V = 0V, I = 1.0mA FS DS D C Input capacitance - 7.5 10 ISS V = -10V, GS C Common source output capacitance - 2.0 3.5 pF V = 25V, OSS DS f = 1.0MHz C Reverse transfer capacitance - 0.5 1.0 RSS t Turn-on delay time - 0.09 - d(ON) V = 25V, DD t Rise time - 0.45 - r s I = 1.0mA, D t Turn-off delay time - 0.1 - d(OFF) R = 25 GEN t Fall time - 1.3 - f V Diode forward voltage drop - - 0.9 V V = -10V, I = 1.0mA SD GS SD t Reverse recovery time - 200 - ns V = -10V, I = 1.0mA rr GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit V DD 0V 90% R L INPUT PULS E 10% GENERATOR -10V OUTPUT t t (ON) (OFF) R GEN t t t t d(ON ) r d(OFF) f V DD D.U.T. 10% 10% OUTPUT INPU T 0V 90% 90% 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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