PD84002 STMicroelectronics

PD84002 RF power transistor The LdmoST plastic family Features Excellent thermal stability Common source configuration Broadband performances P = 2 W with 13 OUT dB gain 870 MHz Plastic package SOT-89 ESD protection Supplied in tape and reel In compliance with the 2002/95/EC european Figure 1. Pin connection directive Description Source The PD84002 is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. PD84002s superior gain and efficiency makes it an ideal solution for portable radio and UHF RFID Source reader. Gate Drain Figure 2. Device summary Order code Marking Package Packaging PD84002 8402 SOT-89 Tape and reel December 2007 Rev 1 1/16 www.st.com 16Contents PD84002 Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static . 4 2.2 Dynamic . 4 2.3 ESD protection characteristics 4 2.4 Moisture sensitivity level . 4 3 Impedances 5 4 DC curves . 6 5 RF curves 7 6 Schematic and BOM . 8 7 Photo . 9 8 Package mechanical data 10 8.1 Thermal Pad and Via design 12 8.2 Soldering profile 13 9 Revision history . 15 2/16