PD85006L-E STMicroelectronics

PD85006L-E RF power transistor the LdmoST plastic family Features Excellent thermal stability Common source configuration P = 6 W with 15 dB gain 870 MHz / OUT 13.6 V Plastic package ESD protection PowerFLAT (5mm x 5mm) In compliance with the 2002/95/EC european directive Description Figure 1. Pin connection The PD85006L-E is a common source N-channel, enhancement-mode lateral Field- Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85006L-E boasts the excellent gain, linearity and reliability of STs latest LDMOS technology mounted in leadless SMD plastic RF power package , PowerFLAT. PD85006L-Es superior linearity performance makes it an ideal solution for mobile radio applications. Table 1. Device summary Order code Marking Package Packaging PD85006L-E 85006 Tape and reel PowerFLAT December 2007 Rev 1 1/17 www.st.com 17Contents PD85006L-E Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static . 4 2.2 Dynamic . 4 2.3 ESD protection characteristics 4 2.4 Moisture sensitivity level . 4 3 Impedances 5 4 DC curves . 6 5 RF curves 7 6 Schematic and BOM . 9 7 Demoboard photo 11 8 Package mechanical data 12 9 Revision history . 16 2/17