X-On Electronics has gained recognition as a prominent supplier of PD85025-E RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. PD85025-E RF MOSFET Transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

PD85025-E STMicroelectronics

Name: PD85025-E
Brand: STMicroelectronics
SKU: PD85025E_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

PD85025-E electronic component of STMicroelectronics

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Part No.	PD85025-E
Manufacturer:	STMicroelectronics
Category:	RF MOSFET Transistors
Description:	RF MOSFET Transistors POWER R.F. N-Ch Trans
Datasheet:	PD85025-E Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 16.875 ea
Line Total: USD 16.88

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

PD85025-E More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Thu. 28 Nov to Wed. 04 Dec MOQ : 1 Multiples : 1	1 : USD 16.875 4 : USD 16.2 15 : USD 16.2 40 : USD 16.2 100 : USD 16.2

We are delighted to provide the PD85025-E from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PD85025-E and other electronic components in the RF MOSFET Transistors category and beyond.

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Additional Infomation About Product

PD85025-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features Excellent thermal stability Common source configuration P = 25 W with 15.7 dB gain 870 MHz / OUT 13.6 V Plastic package PowerSO-10RF (formed lead) ESD protection In compliance with the 2002/95/EC European directive Description The PD85025-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It PowerSO-10RF operates at 13.6 V in common source mode at (straight lead) frequencies of up to 1 GHz. PD85025-E boasts the excellent gain, linearity and reliability of STs Figure 1. Pin connection latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Source PD85025-Es superior linearity performance makes it an ideal solution for car mobile radio. The PowerSO-10 plastic package, designed to Drain offer high reliability, is the first ST JEDEC Gate approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Table 1. Device summary Order codes Package Packing PD85025-E PowerSO-10RF (formed lead) Tube PD85025S-E PowerSO-10RF (straight lead) PD85025TR-E PowerSO-10RF (formed lead) Tape and reel PD85025STR-E PowerSO-10RF (straight lead) June 2011 Doc ID 13593 Rev 3 1/16 www.st.com 16Contents PD85025-E Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static . 4 2.2 Dynamic . 4 2.3 ESD protection characteristics 4 2.4 Moisture sensitivity level . 4 3 Impedance . 5 4 Typical performance . 6 5 Package mechanical data . 9 6 Revision history . 14 2/16 Doc ID 13593 Rev 3

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Manufacturer STMicroelectronics STMicroelectronics
Product Category RF MOSFET Transistors RF MOSFET Transistors
RoHS - XON Y Y
Transistor Polarity N - Channel N - Channel
Technology Si Si
Id - Continuous Drain Current 7 A 7 A
Vds - Drain-Source Breakdown Voltage 40 V 40 V
Operating Frequency 1 GHz 1 GHz
Gain 15.7 Db At 870 Mhz 15.7 Db At 870 Mhz
Output Power 25 W 25 W
Pd - Power Dissipation 79 W 79 W
Minimum Operating Temperature - 65 C - 65 C
Maximum Operating Temperature + 150 C + 150 C
Mounting Style Smd/Smt Smd/Smt
Package / Case POWERSO - 10RF (FORMED LEAD) POWERSO - 10RF (FORMED LEAD)
Packaging Tube Tube
Series Pd85025 - E Pd85025 - E
Transistor Type Mosfet Power Mosfet Power
Brand Stmicroelectronics Stmicroelectronics
Product Type Mosfet Power Mosfet Power
Factory Pack Quantity : 50 50
Vgs - Gate-Source Breakdown Voltage 15 V 15 V