X-On Electronics has gained recognition as a prominent supplier of PD57030-E RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. PD57030-E RF MOSFET Transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

PD57030-E STMicroelectronics

Name: PD57030-E
Brand: STMicroelectronics
SKU: PD57030E_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

PD57030-E electronic component of STMicroelectronics

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Part No.	PD57030-E
Manufacturer:	STMicroelectronics
Category:	RF MOSFET Transistors
Description:	Transistors RF MOSFET RF Pwr Transistors LDMOST Plastic N Ch
Datasheet:	PD57030-E Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 39.2372 ea
Line Total: USD 39.24

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

PD57030-E More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Wed. 29 Jan to Tue. 04 Feb MOQ : 1 Multiples : 1	1 : USD 37.2095 4 : USD 35.8314 15 : USD 34.4533 40 : USD 34.4533 100 : USD 34.4533

0 Ship by Mon. 27 Jan to Wed. 29 Jan MOQ : 1 Multiples : 1	1 : USD 39.2372 10 : USD 36.61 25 : USD 35.0759 100 : USD 33.1004 500 : USD 33.0904

0 Ship by Wed. 29 Jan to Tue. 04 Feb MOQ : 1 Multiples : 1	1 : USD 49.3213 10 : USD 44.7545

0 Ship by Wed. 29 Jan to Tue. 04 Feb MOQ : 1 Multiples : 1	1 : USD 45.5985 10 : USD 41.3764

We are delighted to provide the PD57030-E from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PD57030-E and other electronic components in the RF MOSFET Transistors category and beyond.

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Additional Infomation About Product

PD57030-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features Excellent thermal stability Common source configuration P = 30 W with 14dB gain 945 MHz / 28 V OUT New RF plastic package Description PowerSO-10RF (formed lead) The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity and reliability of STs latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Devices PowerSO-10RF superior linearity performance makes it an ideal (straight lead) solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially Figure 1. Pin connection optimized for RF needs and offers excellent RF Source performance and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294) Drain Gate Table 1. Device summary Order code Package Packing PD57030-E PowerSO-10RF (formed lead) Tube PD57030S-E PowerSO-10RF (straight lead) Tube PD57030TR-E PowerSO-10RF (formed lead) Tape and reel PD57030STR-E PowerSO-10RF (straight lead) Tape and reel December 2010 Doc ID 12613 Rev 3 1/18 www.st.com 18Contents PD57030-E Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static . 4 2.2 Dynamic . 4 2.3 Moisture sensitivity level . 4 3 Impedance . 5 4 Typical performance . 6 4.1 PD57030S-E . 7 5 Test circuit 10 6 Package mechanical data 12 7 Revision history . 17 2/18 Doc ID 12613 Rev 3

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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ST2
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Manufacturer STMicroelectronics STMicroelectronics
Product Category RF MOSFET Transistors RF MOSFET Transistors
RoHS - XON Y Y
Transistor Polarity N - Channel N - Channel
Id - Continuous Drain Current 4 A 4 A
Vds - Drain-Source Breakdown Voltage 65 V 65 V
Operating Frequency 1 GHz 1 GHz
Gain 14 Db At 945 Mhz 14 Db At 945 Mhz
Output Power 30 W 30 W
Configuration Single Single
Pd - Power Dissipation 52.8 W 52.8 W
Minimum Operating Temperature - 65 C - 65 C
Maximum Operating Temperature + 150 C + 150 C
Mounting Style Smd/Smt Smd/Smt
Package / Case POWERSO - 10RF (FORMED LEAD) POWERSO - 10RF (FORMED LEAD)
Packaging Tube Tube
Series Pd57030 - E Pd57030 - E
Brand Stmicroelectronics Stmicroelectronics
Gate-Source Breakdown Voltage +/- 20 V +/- 20 V
Factory Pack Quantity : 50 50